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MOSFET Product lineup

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最新中高壓MOSFET優點

The 400-V to 900-V MOSFETs are used for switching power supply and inverter motor applications. Toshiba offers super-junction MOSFET series suitable for high-output power supply applications and D-MOS (double-diffused) MOSFET series suitable for low-output power supply applications.

產品陣容

N-ch Super Junction
  • 插針式:TO-220,TO-220SIS, IPAK, I2PAK, TO-3P(N), TO-3P(L), TO-247
  • 表面貼裝型:DPAK, D2PAK

開發Roadmap

這是DTMOS系列和競爭產品開發路線展示圖.

應用

fig06_3
通信設備的電源

fig11
UPS

fig07_1
伺服器

fig12_1
液晶電視

fig08_1
臺式電腦

fig17_1
焊機

fig09_1
適配器

fig14_1
印表機

fig10_1
LED 照明

fig16_1
太陽能逆變器

第4代超級結600-V DTMOSⅣ MOSFET系列

DTMOS  series

DTMOS is a super-junction MOSFET series suitable for quick charger,large scale power supply for industry, and other high-output power supply applications. A super-junction MOSFET provides lower on-resistance than a MOSFET in the same package of the π-MOS series. In other words, a super-junction MOSFET with the same on-resistance as for a MOSFET of the π-MOS series is available in a smaller package. Therefore, DTMOS is well suited to reducing the size and improving the efficiency of power supplies.

π-MOS  series

π-MOS is a D-MOS (double-diffused) MOSFET series suitable for low-output power supply applications, including 65-W or lower-wattage notebook PC and game console adapters. Since the switching speed of the π-MOS series is not so fast, it does not generate large EMI noise and is therefore easy to use.

Power Supply for Consumer Appliances

  • 技術製程

東芝已開發出第4代超級結600-V DTMOSⅣ MOSFET系列產品。通過採用最先進的單層外延工藝,DTMOSⅣ減少了30%的Ron・A, 這是MOSFET相較於其前一代產品DTMOSⅢ所具有的一個數位化的優點(FOM)。對於Ron A的降低,實現了在相同封裝中安裝較低Ron晶片的可能。這也有助於提升效率和減小電源的尺寸大小。

  • 開發 Roadmap

    This figure shows the development roadmap for the DTMOS series and competitors' devices.

  • 封裝技術

四引腳TO-247-4L封裝中的柵極驅動源端子採用開爾文連接方式,以便降低內部電源接線的電感,從而允許MOSFET晶片實現高速開關。採用TO-247-4L封裝的功率MOSFET有助於進一步提高中到大型高效開關電源的效率(比如80+*1鈦級和80+鉑級所要求的水準)。四引腳TO-247-4L封裝中的柵極驅動源端子採用開爾文連接方式,以便降低內部電源接線的電感,從而允許MOSFET晶片實現高速開關。採用TO-247-4L封裝的功率MOSFET有助於進一步提高中到大型高效開關電源的效率(比如80+*1鈦級和80+鉑級所要求的水準)。

1. Ron・A減小了30%,這是MOSFET相較於其前一代產品(DTMOSⅢ)的一個數位化優點。

這是DTMOSⅣ和前一代, DTMOSⅢ性能比較圖.

2. 因為採用了獨立單層外延工藝,所以在高溫時導通電阻增加較少。

這是DTMOSⅣ和競爭產品高溫時導通電阻增加性能比較圖.

3. 因為減小了Coss, 所以相較於前一代產品(DTMOSⅢ),可以降低12%的開關損耗、Eoss。

  • DTMOS IV: Eoss曲線

這是DTMOSⅣ Eoss曲線展示圖.

  • 具有相同Ron的產品的效率比較

這是具有相同導通電阻DTMOS系列和競爭產品的效率比較圖.

4. 可用的導通電阻範圍廣泛,RDS(ON): 0.9 Ω–0.018 Ω 最大值

白皮書

Whitepaper
Name outline Date of issue
Evolution of Devices Supporting Power
Electronics and Expansion of Technologies for
Mounting, Circuits, and Application to Products
8/2017

user registration

Optimising power deisng through MOSFET efficiency and intergration 8/2017

user registration

Cordless Power Tools: Delivering High Output Power, Extended Operation and Smaller Form Factors 10/2017

user registration

Describes the features of the new package and an operation analysis using simulation 9/2017

user registration

應用手冊

Application note
Name outline Date of issue
Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. 01/2018
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
describes how to calculate the temperature of discrete semiconductor devices. 12/2017
discusses temperature derating of the MOSFET safe operating area. 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017

user registration

Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017

user registration

Describes the oscillation mechanism of MOSFETs for switching applications 11/2017

user registration

Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016

目錄

Catalog
Name outline Date of issue
Describes the lineups of MOSFET 12/2017
Describes the lineups of power and small-signal MOSFETs by package 3/2016

5. 多種封裝選擇


產品系列

RDS(ON)
max (Ω)
DFN8x8 TO-220 TO-220SIS TO-247 TO-247
4pin
0.125 - 0.135 TK25V60X TK25E60X TK25A60X TK25N60X TK25Z60X
0.088 - 0.098 TK31V60X TK31E60X TK31N60X TK31Z60X
0.065 TK39N60X TK39Z60X
0.040 TK62N60X TK62Z60X
RDS(ON)
max (Ω)
DPAK D2PAK DFN8x8 TO-220 TO-220SIS TO-3P(N) TO-247
(0.99) TK5P60W5 TK5A60W5
0.65 - 0.67 TK7P60W5 TK7A60W5
0.54 - 0.56 TK8P60W5 TK8A60W5
0.45 TK10A60W5
0.23 - 0.24 TK16G60W5 TK16V60W5 TK16E60W5 TK16A60W5 TK16J60W5 TK16N60W5
0.175 - 0.185 TK20V60W5 TK20E60W5 TK20A60W5 TK20J60W5 TK20N60W5
0.14 - 0.15 TK25V60X5 TK25E60X5 TK25A60X5 TK25N60X5
0.099 - 0.109 TK31V60W5 TK31J60W5 TK31N60W5
0.074 TK39J60W5 TK39N60W5
0.045 TK62J60W5 TK62N60W5
RDS(ON)
max (Ω)
DPAK IPAK I2PAK D2PAK DFN8×8 TO-220 TO-220SIS TO-247
1.2 - 1.22 TK5P65W TK5Q65W TK5A65W
1.0 - 1.05 TK6P65W TK6Q65W TK6A65W
0.78 - 0.80
TK7P65W TK7Q65W TK7A65W
0.65 - 0.67 TK8P65W TK8Q65W TK8A65W
0.5 - 0.56 TK9P65W TK9Q65W TK9A65W
 0.39 - 0.44   TK11P65W TK11Q65W TK11A65W
0.25 TK14C65W TK14G65W TK14V65W TK14E65W TK14A65W TK14N65W
0.2 TK17C65W TK17V65W TK17E65W TK17A65W TK17N65W
0.11 TK28V65W TK28E65W TK28A65W TK28N65W
0.08 TK35A65W TK35N65W
0.055 TK49N65W
RDS(ON)
max (Ω)
  I2PAK      D2PAK TO-220 TO-220SIS TO-247
0.3 TK14C65W5 TK14G65W5 TK14E65W5 TK14A65W5 TK14N65W5
0.23 TK17A65W5
0.13 TK28N65W5
0.095 TK35A65W5 TK35N65W5
  0.057    TK49N65W5
產品列表

MOSFET產品陣容
你可以查詢整個MOSFET產品的組合,找到能夠滿足自己所需要的性能規格的產品。

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.