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MOSFET Product lineup

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應用於開關電源的全新低電壓MOSFET系列的優點

(Drain-Source On-Resistance vs. Gate Switch Charge)
Example of Continual Figure-of-Merit Improvement
(Drain-Source On-Resistance vs. Gate Switch Charge)

Toshiba offers an extensive portfolio of low- to medium-VDSS MOSFETs in various packages ranging from ultra-small packages for small-signal applications to packages with a large current capacity for automotive applications. Toshiba has used each successive generation of trench-gate structures and fabrication processes to steadily reduce the drain-source on-resistance, RDS(ON), of its low-voltage power MOSFETs. In addition, Toshiba has continually optimized MOSFET cell structures to improve the trade-offs between drain-source on-resistance and charge characteristics, which are important figures of merit of MOSFETs for switching applications.

In order to help improve the efficiency of application systems and reduce the heat generated by MOSFETs, Toshiba has continually improved various figures of merit of MOSFETs as shown at right. In addition, Toshiba’s Gen-8 trench MOSFET series, U-MOSVIII-H, generate even lower noise and ringing during switching transitions due to the use of a new cell structure.

<Comparison of Drain-Source Voltage Waveforms during Switch-Off Operation>

Parasitic Snubber Circuitlvmos_3

As switching losses decrease, the relative importance of the output charge loss has increased. In response, Toshiba has released the Gen-9 U-MOSIX-H trench MOSFET series fabricated using the latest process that provides much lower output charge loss than the previous series.

Toshiba’s low-voltage power MOSFETs are perfectly suited to improving the energy efficiency and reducing the size of various applications. Toshiba offers a wide range of MOSFET options, allowing you to select the ones that best meet your application needs.

最新的溝槽MOS U-MOSVIII-H / U-MOSIX-H系列

◆Comparisons of figures of merit of typical MOSFETs with VDSS=100 V

Conduction and

drive losses

lvmos-highlight_en1

Conduction and

switching losses

lvmos-highlight_en2

Conduction and
output charge losses

lvmos-highlight_en3

TPH3R70APL:U-MOSⅨ-H、VDSS=100V、RDS(ON)max= 3.7mΩ at VGS=10V、SOP Advance

RDS(ON):On-resistance (figure of merit for conduction loss)            As of January 2018 (as surveyed by Toshiba)
Qg:Gate charge (figure of merit for drive loss)
Qsw:Gate switch charge (figure of merit for switching loss)
Qoss:Output charge (figure of merit for output charge loss)

◆Application example for the MOSFET series with VDSS=100 V and comparisons of MOSFET performance in an application system

Due to its outstanding speed, the 100-V MOSFETs of the U-MOSIX-H series are used for various applications, including DC-DC converters, server power supplies, adapters, motors, micro-inverters, and chargers. An example of a full-bridge DC-DC converter is shown below. The following compares Toshiba’s 100-V U-MOSIX-H MOSFET and a MOSFET from another company in terms of the efficiency and the MOSFET device temperature of its primary side. As demonstrated below, Toshiba’s U-MOSIX-H series helps reduce the MOSFET device temperature and improve the power efficiency of the DC-DC converter.

<Comparison of Efficiency of Full-Bridge DC-DC Converter and MOSFET Device Temperature>

lvmos_en4

<Operating conditions>
 Input voltage = 48 V,output voltage = 24 V

   output power = 25 to 185 W

   operating frequency = 150 kHz

   MOSFET gate drive voltage = 6 V

 <Device evaluated>
 TPH3R70APL:RDS(ON)max= 3.7mΩ at VGS=10V
                             SOP Advance

 Circle Device compared with the TPH3R70APL

Efficiency

lvmos-highlight_en5

Device Temperature

lvmos-highlight_en6

*At the center of the package mold surface

2)VDSS ≦60V

The Gen-9 U-MOSIX-H series is fabricated with a further optimized cell structure and even smaller process geometries than the Gen-8 MOSFET series featuring low switching and drive losses. Consequently, the U-MOSIX-H series provides much lower output charge and switching losses, which are important for power supply and motor drive applications.

◆Comparisons of figures of merit of typical MOSFETs with VDSS=60V

Conduction and

drive losses

lvmos-highlight_en7

Conduction and

switching losses

lvmos-highlight_en8

Conduction and
output charge losses

lvmos-highlight_en9

TPH1R306PL:U-MOSⅨ-H、VDSS=60V、RDS(ON)max= 1.34mΩ at VGS=10V、SOP Advance

RDS(ON):On-resistance (figure of merit for conduction loss)            As of January 2018 (as surveyed by Toshiba)
Qg:Gate charge (figure of merit for drive loss)
Qsw:Gate switch charge (figure of merit for switching loss)
Qoss:Output charge (figure of merit for output charge loss)

◆Application example for the MOSFET series with VDSS=60V and comparisons of MOSFET performance in an application system

In addition to 100-V MOSFETs, the 60-V MOSFETs of the U-MOSⅨ-H series are used for various applications including the secondary side of AC-DC power supplies for communication equipment and base stations, DC-DC converters for communication equipment, server power supplies, motors, and micro-inverters. Like the 100-V MOSFETs, the 60-V MOSFETs of the U-MOSIX-H series help reduce the MOSFET device temperature and improve the power efficiency of a full-bridge DC-DC converter.

lvmos_en10

<Operating conditions>
 Input voltage=48V

   output voltage=24V

   output power =5~25 A

   operating frequency=160kHz

   MOSFETgate drive voltage=6V

 <Device evaluated:>
 TPH1R306PL:RDS(ON)max= 1.34mΩ at VGS=10V,
                          SOP Advance

 Circle Device compared with the TPH1R306PL

Efficiency

lvmos-highlight_en12

Device Temperature

lvmos-highlight_en11

* At the center of the package mold surface

3)Wide channel and storage temperature ranges of up to 175°C

The MOSFETs of the U-MOSIX-H series, including those with a VDSS of 30 V, are guaranteed at a channel temperature of up to 175°C and over a storage temperature range from -55°C to 175°C.

  • U-MOSVIII-H Series

The high-performance U-MOSVIII-H series combines low on-resistance and high switching speed. The U-MOSVIII-H series helps reduce switching losses in the high-frequency region and therefore improve the efficiency of power supplies. Like the U-MOSIX-H series, the parasitic RC snubber in the U-MOSVIII-H series helps reduce switching noise. In addition, the U-MOSVIII-H series is available with a VDSS of 30 to 250 V and in various packages including the state-of-the-art double-sided-cooling packages (see the table below).

U-MOSⅧ‐H世代とU-MOSⅨ‐H世代のカバレージ比較

Comparison of Coverage of the U-MOSVIII-H and U-MOSIX-H Series

  • 最新U-MOSⅨ-H系列

    U-MOSⅨ-H系列專門設計用於同步整流應用,包括二次側隔離開關電源。它改進了Qoss*1性能,要知道該性能是同步整流功率損耗的原因之一。U-MOSⅨ-H系列相比於其他半導體供應商*2所提供的最新產品,其Ron•Qoss降低了27%,實現了導通電阻(Ron)和Qoss之間的平衡。因為Ron對於Qoss具有重要影響,東芝將通過採用超低Ron的MOSFET擴大U-MOSⅨ-H產品組合,以便補充U-MOSⅧ-H系列的產品陣容。

*1 Qoss: 輸出電荷(漏-源極電荷)

*2 當比較相同封裝的40-V MOSFET時(截止於2014年12月的東芝調查)

特徵

  • U-MOSⅧ-H系列

    U-MOSⅧ-H系列提供業內最廣泛的低導通電阻MOSFET產品組合,實現了低導通電阻和電容之間的最佳平衡。憑藉其快速操作的特性,U-MOSⅧ-H系列有助於降低開關損耗,這就實現了電源效率的增加。U-MOSⅧ-H
    系列可提供的VDSS為30至250V,且採用多種封裝形式,包括具有雙面冷卻功能的先進封裝。

功率MOSFET的封裝趨勢

東芝通過採用最新的小型工藝並改進封裝結構,努力降低MOSFET的導通電阻。東芝提供具有雙面冷卻功能的封裝,它具有一個裸露的頂部散熱器。該封裝能提供超低的通道至外殼熱阻(rthch-c),達0.93°C/W,從而簡化了熱設計。

lvmos1e

  • 12-300V MOSFETs 封裝趨勢

    Packaging Trends for 12-300V MOSFETs

    東芝提供各種不同用途之包裝, 從小包裝(0.8x0.6mm)到高散熱封裝皆有

  • semi power的封裝特性

    Packaging feature for type of semi power

    當SOT-23F 及 SOT-23安裝面積相同時, SOT-23F的板上晶片能力高於SOT-23. 因此SOT-23F性能優於SOT-23.

  • Thermally Enhanced DSOP Advance Package

    1. The DSOP Advance package efficiently dissipates heat from the metal plates on the top and bottom surfaces.

        ⇒ The DSOP Advance package provides a higher current capacity than the conventional package with the same size and therefore helps save PCB space and reduce the system size.

    2. The DSOP Advance package is footprint-compatible with the SOP Advance package.

        ⇒ MOSFETs in the DSOP Advance package serve as easy replacements for those in the SOP Advance package without the need for modifying the PCB layout.

    3. The DSOP Advance package has lower resistance.

    DSOP Advance PackageDouble Side Cooling Package

  • Power MOSFETs 的封裝趨勢

    • 熱從上下表面同時散發
    • 上金屬板連接至源極
      (源極不能作為電極進行導電, 它用於散熱目的)
    • 與現有的SOP Advance具有相同封裝尺寸
      (SOP Advance 可以用新封裝替代且不需要修改現有的PCB版)

  • 大電流封裝

    • 由於銅板壓接增加電流密度與Ron
    • 大電流封裝的面積與通用封裝相等

    Packaging for high current

    High Current Type General Type
    TO-220SM(W) TO-220SM(D2PAK)
    DPAK+ New PW-Mold
    SOP Advance SOP-8

    TO-220SM(W)、DPAK+、SOP Advance

功率MOSFET的封裝趨勢

  • 熱量從上下表面同時散發。
  • 上金屬板連接至源極。(源極不能作為電極進行導電。它用於散熱目的。)
  • 與現有的SOP Advance具有相同的封裝尺寸。(SOP Advance可以用新封裝代替,而不需要修改現有的PCB布局。)

產品範圍

U-MOSⅧ-H和U-MOSⅨ-H系列相比於其它系列,可提供更廣泛的R(DS)ON和VDSS,從而能滿足各種應用需求。

推薦應用的配件

fig06_1
通信設備的電源

fig11_1
UPS

fig07
伺服器

fig12
液晶電視

fig08
臺式電腦

fig13_1
機械工具

fig09
適配器

fig14
印表機

fig10
LED 照明

fig15_1
電池組

文件

白皮書

Whitepaper
Name outline Date of issue
Evolution of Devices Supporting Power
Electronics and Expansion of Technologies for
Mounting, Circuits, and Application to Products
8/2017

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Optimising power design through MOSFET efficiency and intergration 8/2017

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Cordless Power Tools: Delivering High Output Power, Extended Operation and Smaller Form Factors 9/2017

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Dual side cooling package DSOP Advance: Thermal conductance innovation for power-MOSFET 8/2017

user registration

應用手冊

Application note
Name outline Date of issue
Provides hints and tips based on simulation results to help you reduce the chip temperature of discrete semiconductor devices. 01/2018
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
describes how to reduce the chip temperature of discrete semiconductor devices. 12/2017
describes how to calculate the temperature of discrete semiconductor devices. 12/2017
discusses temperature derating of the MOSFET safe operating area. 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 11/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 11/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 11/2017

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Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016

目錄

Catalog
Name outline Date of issue
Describes the lineups of power and small-signal MOSFETs by package 3/2016

U-MOSⅧ-H / U-MOSⅨ-H屬於高效能MOSFET系列,專門設計用於筆記型電腦適配器、遊戲控制台、伺服器、桌上型電腦、平板顯示器等AC-DC電源的二次側,也應用於通信設備、伺服器和資料中心的DC-DC電源。 U-MOSⅧ-H / U-MOSⅨ-H 結合了最新的第8代溝槽MOS製程,將有助於提高電源的效率。

Video


U-MOSⅧ-H / U-MOSⅨ-H 系列產品

VDSS
(V)
RDS(ON)
(mΩ)
TSON Advance SOP Advance SOP-8 DSOP Advance TO-220 TO-220SIS DPAK D2PAK
30 10 - 20 TPN11003NL TPH11003NL

5 - 10 TPN8R903NL
TPN6R303NC
TPN6R003NL
TPN5R203PL
TPH8R903NL
TPH6R003NL
TP89R103NL
TP86R203NL
3 - 5 TPN4R303NL
TPN4R203NC
TPH4R803PL
TPH4R003NL
TPH3R203NL
TK3R3E03GL
1 - 3 TPN2R903PL
TPN2R703NL
TPN2R503NC
TPN2R203NC
TPN1R603PL
TPH3R003PL
TPH2R903PL
TPH2R003PL

TPH1R403NL
< 1 TPHR9203PL
TPHR9003NL
TPHR9003NC
TPHR6503PL
TPWR8503NL
TPWR6003PL
40 10 - 20
5 - 10 TPN7R504PL TPH7R204PL
TPH6R004PL
3 - 5 TPN3R704PL TPH3R704PC
TPH3R704PL
TK3R1E04PL TK3R1A04PL TK3R1P04PL
1 - 3 TPN2R304PL TPH2R104PL
TPH1R204PB
TPH1R204PL
< 1 TPHR8504PL TPWR8004PL
45 1 - 3 TPN2R805PL TPH2R805PL
TPH1R405PL
TPH1R005PL
< 1 TPW1R005PL
60 20 - 50 TPN22006NH
10 - 20 TPN14006NH
TPN11006NL
TPN11006PL
TPH14006NH
TPH11006NL
TK30E06N1
TK40E06N1
TK30A06N1
TK40A06N1
5 - 10 TPN7R506NH
TPN7R006PL
TPH9R506PL
TPH7R506NH
TPH7R006PL
TPH5R906NH
TK8R2E06PL
TK58E06N1
TK5R1E06PL
TK8R2A06PL
TK58A06N1
TK5R3A06PL
TK6R7P06PL
3 - 5 TPN4R806PL TPH4R606NH
TPH3R506PL
TK4R3E06PL
TK3R2E06PL
TK4R3A06PL
TK3R3A06PL
TK4R4P06PL TK4R8G06PL
1 - 3 TPH2R306NH
TPH2R506PL
TPH1R306PL
TPH1R306P1
TPW1R306PL TK100E06N1 TK100A06N1 TK2R9G06PL
75 1 - 3 TPH2R608NH TPW2R508NH
80 30 - 50 TPN30008NH
10 - 20 TPN13008NH TPH12008NH TK35E08N1 TK35A08N1
5 - 10 TPH8R008NH TK46E08N1 TK46A08N1
3 - 5 TPH4R008NH TPW4R008NH TK72E08N1
TK100E08N1
TK72A08N1
TK100A08N1
100 30 - 50 TPN3300ANH
10 - 20 TPN1600ANH
TPN1200APL
TPH1400ANH TK22E10N1
TK110E10PL
TK22A10N1
TK110A10PL
TK110P10PL
5 - 10 TPH8R80ANH
TPH6R30ANL
TPH5R60APL
TK34E10N1
TK40E10N1
TK7R2E10PL
TK6R4E10PL
TK34A10N1
TK40A10N1
TK7R4A10PL
TK6R7A10PL
TK7R7P10PL
3 - 5 TPH4R50ANH
TPH4R10ANL
TPH3R70APL
TPW4R50ANH
TPW3R70APL
TK65E10N1
TK3R9E10PL
TK100E10N1
TK65A10N1
TK4R1A10PL
TK100A10N1
TK3R2A10PL
TK65G10N1
TK3R7G10PL
1 - 3 TK2R9E10PL
120 10 - 20 TK32E12N1 TK32A12N1
5 - 10 TK42E12N1
TK56E12N1
TK42A12N1
TK56A12N1
3 - 5 TK72E12N1 TK72A12N1
150 50 - 100 TPN5900CNH TPH5900CNH
20 - 50 TPH3300CNH
10 - 20 TPH1500CNH TPW1500CNH
200 100 - 200 TPN1110ENH TPH1110ENH
50 - 100 TPH6400ENH
20 - 50 TPH2900ENH TPW2900ENH
250 200 - 300 TPN2010FNH TPH2010FNH
100 - 200 TPH1110FNH
50 - 100 TPH5200FNH TPW5200FNH
產品列表

MOSFET產品陣容
你可以查詢整個MOSFET產品的組合,找到能夠滿足自己所需要的性能規格的產品。

Other MOSFET-related web pages

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.