Power Protection

Example of Power Protection Block

Circuit Description

Example of Power Protection Block

External ESD, abnormal input power, and hot-plug surges are often problems with the power supply. Protection of valuable data from these damages is required in the design.

Toshiba's eFuse IC realizes ultra-high-speed short-circuit protection, and has various protection functions such as overcurrent, overvoltage and inrush current suppression in a single package. In addition, since it has IEC62368-1 (G.9) compliance, it is possible to design a protective circuit simpler and stronger than before.

Toshiba's high-IPP TVS diodes (ESD-protection diodes) and Zener diodes can also be used to suppress from a few ns-order to ms-order ESD and transient voltages. In addition, when combined using with the SBD, a more robust protection circuit can be realized as a countermeasure against negative voltage and reverse current.

When an excessive current flows, the internal detection circuit operates and the built-in MOS is turned off, thus providing a high-speed current breaking function for conventional fuses. Furthermore, it is not destroyed by a single overcurrent, and can be used repeatedly. It also has the advantage that it can incorporate a variety of protection functions such as overvoltage protection. This product is also effective in reducing maintenance costs and restoration time required for repairs.

Product name

Package
(Width×Length×Height mm)

Product Overview

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TCKE805NA

WSON10B
(3.0×3.0×0.75)

Auto retry type, RON=28 mΩ, IOUT (DC) =5.0 A (Max) , VOVC (Clump Voltage) = 6.0 V

TCKE805NL

WSON10B
(3.0×3.0×0.75)

Latch type, RON=28 mΩ, IOUT (DC) =5.0 A (Max) , VOVC (Clump Voltage) = 6.0 V

Preventing damage or malfunction of the device due to external surge voltage, wide line-up of protection diodes ranging from one line to four lines is available in a small package, and high ESD tolerance and circuit protection performance realized by original process technology.

Product name

Package
(Width×Length×Height mm)

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DF2B5M4CT

SOD-882 (CST2)
(1.0×0.6×0.38)

VRMW=+/-3.6 V, VESD=+/-20 kV, IPP=2 A, Ct=0.3 pF

DF2B6M4CT

SOD-882 (CST2)
(1.0×0.6×0.38)

VRMW=+/-5.5 V, VESD=+/-20 kV, IPP=2 A, Ct=0.3 pF

DF2S6P2CTC

SOD-963 (CST2C)
(1.6×0.8×0.48)

VRMW=5.5V VESD=+/-30kV IPP=80A Ct=600pF

DF2S14P2CTC

SOD-963 (CST2C)
(1.6×0.8×0.48)

VRMW=12.6V VESD=+/-30kV IPP=50A Ct=270pF

Superior low-VF and low-IR types ranging from general-purpose to high-power products. Schottky Barrier Diodes can contribute to high power efficiency and power saving of various devices. 

Product name

Package
(Width×Length×Height mm)

Product Overview

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CUHS20F30

US2H
(2.5×1.4×0.60)

Schottky Barrier Diode, VR=30 V,  IO=2 A, VF=0.40 V (Typ.) (@IF=2 A), Ct=380 pF (Typ.)

CUHS20F40

US2H
(2.5×1.4×0.60)

Schottky Barrier Diode, VR=40 V,  IO=2 A, VF=0.47 V (Typ.) (@IF=2 A), Ct=300 pF (Typ.)

Other Circuit Description

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