External ESD, abnormal input power, and hot-plug surges are often problems with the power supply. Protection of valuable data from these damages is required in the design.
Toshiba's eFuse IC realizes ultra-high-speed short-circuit protection, and has various protection functions such as overcurrent, overvoltage and inrush current suppression in a single package. In addition, since it has IEC62368-1 (G.9) compliance, it is possible to design a protective circuit simpler and stronger than before.
Toshiba's high-IPP TVS diodes (ESD-protection diodes) and Zener diodes can also be used to suppress from a few ns-order to ms-order ESD and transient voltages. In addition, when combined using with the SBD, a more robust protection circuit can be realized as a countermeasure against negative voltage and reverse current.
When an excessive current flows, the internal detection circuit operates and the built-in MOS is turned off, thus providing a high-speed current breaking function for conventional fuses. Furthermore, it is not destroyed by a single overcurrent, and can be used repeatedly. It also has the advantage that it can incorporate a variety of protection functions such as overvoltage protection. This product is also effective in reducing maintenance costs and restoration time required for repairs.
Product name |
Package (Width×Length×Height mm) |
Product Overview |
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WSON10B |
Auto retry type, RON=28 mΩ, IOUT (DC) =5.0 A (Max) , VOVC (Clump Voltage) = 6.0 V |
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WSON10B |
Latch type, RON=28 mΩ, IOUT (DC) =5.0 A (Max) , VOVC (Clump Voltage) = 6.0 V |
Preventing damage or malfunction of the device due to external surge voltage, wide line-up of protection diodes ranging from one line to four lines is available in a small package, and high ESD tolerance and circuit protection performance realized by original process technology.
Product name |
Package (Width×Length×Height mm) |
Product Overview |
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SOD-882 (CST2) |
VRMW=+/-3.6 V, VESD=+/-20 kV, IPP=2 A, Ct=0.3 pF |
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SOD-882 (CST2) |
VRMW=+/-5.5 V, VESD=+/-20 kV, IPP=2 A, Ct=0.3 pF |
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SOD-963 (CST2C) |
VRMW=5.5V VESD=+/-30kV IPP=80A Ct=600pF |
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SOD-963 (CST2C) |
VRMW=12.6V VESD=+/-30kV IPP=50A Ct=270pF |
Superior low-VF and low-IR types ranging from general-purpose to high-power products. Schottky Barrier Diodes can contribute to high power efficiency and power saving of various devices.
Product name |
Package (Width×Length×Height mm) |
Product Overview |
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US2H |
Schottky Barrier Diode, VR=30 V, IO=2 A, VF=0.40 V (Typ.) (@IF=2 A), Ct=380 pF (Typ.) |
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US2H |
Schottky Barrier Diode, VR=40 V, IO=2 A, VF=0.47 V (Typ.) (@IF=2 A), Ct=300 pF (Typ.) |