This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
型號需要超過三個文字以上
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
型號需要超過三個文字以上
At above a certain voltage, the amount of current that flows in a transistor increases sharply, creating breakdown conditions. Unless the voltage is lowered, prolonged exposure to the breakdown conditions damages the device permanently because of self-heating. Generally, the maximum leakage current is guaranteed when a voltage lower than the breakdown voltage (absolute maximum rated voltage) is applied. An increase in ambient temperature leads to an increase in leakage current, but does not affect the breakdown voltage significantly.