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Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7104AF

Short circuit detection circuit block diagram

Short circuit detection circuit block diagram Click to enlarge
(Click the image to see the enlarged image)

Power supply reverse protection circuit block diagram

Power supply reverse protection circuit block diagram Click to enlarge
(Click the image to see the enlarged image)

Description

  • Introduction of solid state relay application with TPD7104AF and power MOSFET
  • Description of the load short circuit(over current) detection function and the power supply reverse connection protection function
  • Design example of 40A capable solid state relay application
  • Operation confirmation by spice simulation

Features

  • Solid state relay application with two pairs of TPD7104AF and TKR74F04PB
  • Input voltage : 12V
  • Maximum load current : 40A
  • Load short circuit(over current) detection function
  • Power supply reverse connection protection function

Reference design files

Design, Document

“Design・Document” contains the documents listed below.

Circuit diagram

BOM

Reference guide

Design, File

“Design・File” contains the contents listed below.

Circuit schematic (OrCAD®)

Simulation file (PSpice®)

Toshiba items

Catalog
Part Number Device Category Portion Usage Description
TPD7104AF Low voltage IPD 2 Power MOSFET Gate driver/High-side switch/VDD=5 to 18V/Built-in charge pump circuit /PS-8
TKR74F04PB* MOSFET 2 U-MOSIX-H/40V/0.74mΩ(max)@VGS=10V/High-speed switching/TO-220SM(W)

* : New product

Documents

Application Note

Application note
Name Outline Date of issue
Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the oscillation mechanism of MOSFETs for switching applications 8/2017
Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 8/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 8/2017
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016

Catalog

Catalog
Name Outline Date of issue
Describes the lineups of Power MOSFETs and Small-signal MOSFETs by polarity and packages. 12/2017
Describes the lineups of power and small-signal MOSFETs. 3/2016
The lineup table of power and small-signal MOSFETs by package. 3/2016

Contacts

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.