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MOSFET4 Leads Package DFN8x8(TK25V60X) Application Circuit

Device and prastic inductance of PCB trace

Device and prastic inductance of PCB trace Click to enlarge
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Simulation circuit

Simulation circuit Click to enlarge
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Description

  • Introduction of features of the DFN8x8 package, a 4 leads structure, which has a source terminal for gate drive circuit additionally compared with the conventional 3 leads pacckage.
  • Describing the 4 leads package feature that achievs less oscillation of gate signal and lower switching loss than the 3 leads because the 4 leads package is not affected by parasitic inductance of source wiring

Reference design files

Design, Document

“Design・Document” contains the documents listed below.

Reference guide

Design, File

“Design・File” contains the contents listed below.

Simulation file (PSpice®)

Toshiba items

Catalog
Part Number Device Category Portion Usage Description
TK25V60X MOSFET DTMOSIV-H/600V/135mΩ(max)@VGS=10V/High-speed switching type/DFN8x8

Documents

Application Note

Application note
Name Outline Date of issue
This document describes how to reduce the chip temperture of discrete semiconductor devices. 12/2017
This document provides hints and tips based on simulation results to help you reduce the chip temperature opf discrete semiconductor devices. 1/2018
This document describes how to calculate the temperature of discrete semiconductor devices. 12/2017
The Safe Operating Area(SOA) is specified at 25 deg.C on the data-sheet. This document describes the way of temperature derating of the safe operating area on actual operation
that is actually required.
12/2017
The high dv / dt between the drain and the source of the MOSFET can cause problems and explain the cause of this phenomenon and its countermeasures. 12/2017
Describes mechanism of avalanche phenomenon, I will explain durability and countermeasures against it 12/2017
When a rapidly rising voltage is applied between the drain and source of the MOSFET,the MOSFET may malfunction and turn on, and its mechanism and countermeasures will be explained. 12/2017
Describes the oscillation mechanism of MOSFETs for switching applications 8/2017
Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 8/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 8/2017

Catalog

Catalog
Name Outline Date of issue
Describes the lineups of Power MOSFETs and Small-signal MOSFETs by polarity and packages. 12/2017
Describes the lineups of power and small-signal MOSFETs. 3/2016
The lineup table of power and small-signal MOSFETs by package. 3/2016

Contacts

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.