SSM3J371R

Small Low ON resistance MOSFETs

Description

Application Scope Power Management Switches
Feature High ESD protected
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOT-23F
Package Image SOT-23F
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.4×0.8
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note) Download from UltraLibrarian® in your desired CAD format (Note)

 Please refer to the link destination to check the detailed size.

 (Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -20 V
Gate-Source voltage VGSS +6/-8 V
Drain current ID -4.0 A
Power Dissipation PD 1.0 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -1.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 55
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 75
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 100
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.5V 150
Input capacitance (Typ.) Ciss - 630 pF
Total gate charge (Typ.) Qg VGS=-4.5V 10.4 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

  • If the checkbox is invisible, the corresponding document cannot be downloaded in batch.

Jun,2020

Feb,2024

Dec,2023

Apr,2024

Apr,2024

Technical inquiry

Contact us

Contact us

Frequently Asked Questions

FAQs

Notes

back to list
A new window will open