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Latest U-MOSⅨ-H Series

The U-MOSⅨ-H series incorporates outstanding trench process and packaging technologies to provide the industry’s best-in-class performance. Fabricated with the latest process and the optimized cell structure, the U-MOSⅨ-H series provides a greatly improved trade-off between on-resistance and charge characteristics, which is an important figure of merit for MOSFETs. Consequently, the U-MOSⅨ-H series provides significant reductions in major losses including conduction loss, drive loss, switching loss, and output charge loss, which help improve the efficiency of application systems and reduce the MOSFET device temperature.

Comparisons of figures of merit of typical MOSFETs with VDSS=60V

The Gen-9 U-MOSⅨ-H series is fabricated with a further optimized cell structure and even smaller process geometries than the Gen-8 MOSFET series featuring low switching and drive losses. Consequently, the U-MOSⅨ-H series provides much lower output charge and switching losses, which are important for power supply and motor drive applications.

TPH1R306PL:U-MOSⅨ-H、VDSS=60V、RDS(ON)max= 1.34mΩ at VGS=10V、SOP Advance

Conduction and
drive losses

Conduction and drive losses

Conduction and
switching losses

Conduction and switching losses

Conduction and
output charge losses

Conduction and output charge losses

As of January 2018 (as surveyed by Toshiba)

RDS(ON) : On-resistance (figure of merit for conduction loss)

Qg : Gate charge (figure of merit for drive loss)
Qsw : Gate switch charge (figure of merit for switching loss)
Qoss : Output charge (figure of merit for output charge loss)

Comparisons of MOSFET with VDSS=60V performance in an application system (Full-bridge DC-DC converter)

The 60-V MOSFETs of the U-MOSⅨ-H series are used for various applications including the secondary side of AC-DC power supplies for communication equipment and base stations, DC-DC converters for communication equipment, server power supplies, motors, and micro-inverters. The 60-V MOSFETs of the U-MOSⅨ-H series help reduce the MOSFET device temperature and improve the power efficiency of a full-bridge DC-DC converter.

Circuit
  • Operating conditions
    Input voltage=48V
    Output voltage=24V
    Output current =5 to 25 A
    Operating frequency=160kHz
    MOSFETgate drive voltage=6V
  • Device evaluated:
    TPH1R306PL:RDS(ON)max= 1.34mΩ at VGS=10V、SOP Advance

Device compared with the TPH1R306PL

Efficiency

Efficiency

Device Temperature

Device Temperature

Comparisons of figures of merit of typical MOSFETs with VDSS=100V

Fabricated with the latest process and the optimized cell structure, the U-MOSⅨ-H series provides a greatly improved trade-off between on-resistance and charge characteristics, which is an important figure of merit for MOSFETs. Consequently, the U-MOSⅨ-H series provides significant reductions in major losses including conduction loss, drive loss, switching loss, and output charge loss, which help improve the efficiency of application systems and reduce the MOSFET device temperature.

TPH3R70APL:U-MOSⅨ-H、VDSS=100V、RDS(ON)max= 3.7mΩ at VGS=10V、SOP Advance

Conduction and
drive losses

Conduction and drive losses

Conduction and
switching losses

Conduction and switching losses

Conduction and
output charge losses

Conduction and output charge losses

As of January 2018 (as surveyed by Toshiba)

RDS(ON):On-resistance (figure of merit for conduction loss) 
Qg:Gate charge (figure of merit for drive loss)
Qsw:Gate switch charge (figure of merit for switching loss)
Qoss:Output charge (figure of merit for output charge loss)

Comparisons of MOSFET with VDSS=100V performance in an application system (Full-bridge DC-DC converter)

Due to its outstanding speed, the 100-V MOSFETs of the U-MOSⅨ-H series are used for various applications, including DC-DC converters, server power supplies, adapters, motors, micro-inverters, and chargers. An example of a full-bridge DC-DC converter is shown below. The following compares Toshiba’s 100-V U-MOSⅨ-H MOSFET and a MOSFET from another company in terms of the efficiency and the MOSFET device temperature of its primary side. As demonstrated below, Toshiba’s U-MOSIX-H series helps reduce the MOSFET device temperature and improve the power efficiency of the DC-DC converter.

Circuit
  • Operating conditions
    Input voltage = 48 V,output voltage = 24 V
    Output power = 25 to 185 W
    Operating frequency = 150 kHz
    MOSFET gate drive voltage = 6 V
  • Device evaluated
    TPH3R70APL : RDS(ON)max= 3.7mΩ at VGS=10V、SOP Advance

Device compared with the TPH1R306PL

Efficiency

Efficiency

Device Temperature

Device Temperature

Switching noise reduction by snubber circuit(Low Spike Technology)

We have continually improved various performances to improve the efficiency of applied equipment and to reduce heat generation in MOSFETs. In the Gen-8 MOSFET (U-MOSⅧ-H series), in addition to these improvements, noise and ringing during switching are reduced by adopting a new cell structure. Furthermore, as shown in the figure below, The Gen-9 U-MOSⅨ-H series have a lineup of low spike type with snubber constants optimized and high efficiency type.

 

TPH1R306P1(60V)

TPH1R306PL

Switching waveform

Switching waveform

trr waveform

trr waveform

TPH1R306P1 (Low Spike)

TPH1R306P1

TPH1R306P1

VDSS=60V

Part No. Ros(on)(mΩ) Ciss
(Typ.)
(pF)
Crss
(Typ.)
(pF)
Coss
(Typ.)
(pF)
Qg
(Typ.)
(nC)
rg
(Typ.)
(Ω)
Qrr
(Typ.)
(nC)
Vspike
SW
(V)
Vspike
trr
(V)
VGS=10V VGS=4.5V
Typ. Max. Typ. Max.
TPH1R306PL 1.0 1.34 1.5 2.3 6250 80 1160 91 0.5
48 36.8
59.2
TPH1R306P1 0.96 1.28 1.5 2.3 6250 80 1160 91 2.2 39 31.9 38.2

VDSS=40V

Part No. Ros(on)(mΩ) Ciss
(Typ.)
(pF)
Crss
(Typ.)
(pF)
Coss
(Typ.)
(pF)
Qg
(Typ.)
(nC)
rg
(Typ.)
(Ω)
Qrr
(Typ.)
(nC)
Vspike
SW
(V)
Vspike
trr
(V)
VGS=10V VGS=6V VGS=4.5V
Typ. Max. Typ. Max. Typ. Max.
TPH1R204PL 1.0 1.24 - - 1.5 2.1 5500 93 1300 74 0.6
46 28.0
39.4
TPH1R204PB 0.85 1.20 1.2 1.96
- - 4400 55
1300 62
3
44
26.5
28.0

U-MOSⅨ-H / U-MOSⅧ-H Series Lineups

※Clicking on a circle allows you to see a product list.

U-MOSⅨ-H / U-MOSⅧ-Hシリーズ 製品カバレージ

Ⅷ: U-MOSⅧ-H
Ⅸ: U-MOSⅨ-H

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