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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Power Protection

Example of Power Protection Block

Circuit Description

Example of Power Protection Block

External ESD, abnormal input power, and hot-plug surges are often problems with the power supply. Protection of valuable data from these damages is required in the design.

Toshiba's eFuse IC realizes ultra-high-speed short-circuit protection, and has various protection functions such as overcurrent, overvoltage and inrush current suppression in a single package. In addition, since it has IEC62368-1 (G.9) compliance, it is possible to design a protective circuit simpler and stronger than before.

Toshiba's high-IPP TVS diodes (ESD-protection diodes) and Zener diodes can also be used to suppress from a few ns-order to ms-order ESD and transient voltages. In addition, when combined using with the SBD, a more robust protection circuit can be realized as a countermeasure against negative voltage and reverse current.

When an excessive current flows, the internal detection circuit operates and the built-in MOS is turned off, thus providing a high-speed current breaking function for conventional fuses. Furthermore, it is not destroyed by a single overcurrent, and can be used repeatedly. It also has the advantage that it can incorporate a variety of protection functions such as overvoltage protection. This product is also effective in reducing maintenance costs and restoration time required for repairs.

Product name

Package
(Width×Length×Height mm)

Product Overview

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TCKE805NA

WSON10B
(3.0×3.0×0.75)

Auto retry type, RON=28 mΩ, IOUT (DC) =5.0 A (Max) , VOVC (Clump Voltage) = 6.0 V

TCKE805NL

WSON10B
(3.0×3.0×0.75)

Latch type, RON=28 mΩ, IOUT (DC) =5.0 A (Max) , VOVC (Clump Voltage) = 6.0 V

Preventing damage or malfunction of the device due to external surge voltage, wide line-up of protection diodes ranging from one line to four lines is available in a small package, and high ESD tolerance and circuit protection performance realized by original process technology.

Product name

Package
(Width×Length×Height mm)

Product Overview

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DF2B5M4CT

SOD-882 (CST2)
(1.0×0.6×0.38)

VRMW=+/-3.6 V, VESD=+/-20 kV, IPP=2 A, Ct=0.3 pF

DF2B6M4CT

SOD-882 (CST2)
(1.0×0.6×0.38)

VRMW=+/-5.5 V, VESD=+/-20 kV, IPP=2 A, Ct=0.3 pF

DF2S6P2CTC

SOD-963 (CST2C)
(1.6×0.8×0.48)

VRMW=5.5V VESD=+/-30kV IPP=80A Ct=600pF

DF2S14P2CTC

SOD-963 (CST2C)
(1.6×0.8×0.48)

VRMW=12.6V VESD=+/-30kV IPP=50A Ct=270pF

Superior low-VF and low-IR types ranging from general-purpose to high-power products. Schottky Barrier Diodes can contribute to high power efficiency and power saving of various devices. 

Product name

Package
(Width×Length×Height mm)

Product Overview

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CUHS20F30

US2H
(2.5×1.4×0.60)

Schottky Barrier Diode, VR=30 V,  IO=2 A, VF=0.40 V (Typ.) (@IF=2 A), Ct=380 pF (Typ.)

CUHS20F40

US2H
(2.5×1.4×0.60)

Schottky Barrier Diode, VR=40 V,  IO=2 A, VF=0.47 V (Typ.) (@IF=2 A), Ct=300 pF (Typ.)

Other Circuit Description

Power Management

Other block diagrams

Signal system
Example of device protection circuit against ESD from external connector

Application / Solid State Drive

Level shift (1)
Example of voltage level convertion circuit using MOSFET

Application / Solid State Drive

Level shift (2)
Example of voltage level conversion circuit using logic IC

Application / Solid State Drive

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