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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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Transistor Arrays: Key Features of New Products

The output stage is migrating from bipolar transistors to DMOS FETs.

High efficiency and high output current due to the use of DMOS FETs in the output stage.

Bipolar transistors have been used for various applications for 40 years since their invention. Since bipolar transistors require a large input current, an auxiliary circuit is sometimes necessary to drive them.

The new DMOS FET transistor arrays require considerably less input current than bipolar transistor arrays, making it easier to directly interface with an MCU. Furthermore, DMOS FET transistor arrays tolerate higher voltage and consume less power due to the reduced on-resistance of the output stage.

  • Roughly 40% reduction in power loss, compared with Toshiba’s previous product series (Ta = 25°C,  IOUT = 200 mA)
  • Low input current: 0.1 mA (max) (VIN=3 V)
  • Absolute maximum ratings of the output stage (TBD62064A and TBD62308A series)
    • Output breakdown voltage: 50 V
    • Output current (max): 1.5 A

You can choose a package that best suits your needs.

Package Typical Part Number Features
Standard
Type
DIP DIP16-P-300-2.54A
TBD62xxxAPG Hole-through; popular for hobby, amusement and industrial applications
SOP SOP16-P-225-1.27 TBD62xxxAFG Surface-mount
SSOP
(0.65)
SSOP16-P-225-0.65B TBD62xxxAFNG Surface-mount (0.65-mm lead pitch), shrink package
SOL P-SOP16-0410-1.27-002 TBD62xxxAFWG

Surface-mount, high efficiency
High-Current Type HSOP
HSOP16-P-300-1.00 TBD62xxxAFG Surface-mount, high current, thermal fin
SSOP
(1.00)
P-SSOP24-0613-1.00-001 TBD62xxxAFAG Surface-mount (1.00-mm lead pitch), high current

You can use DMOS FET transistor arrays in a flexible manner according to your application needs.

You can use DMOS FET transistor arrays in a flexible manner according to your application needs.

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