SiC MOSFET & SBD Campaign
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3rd-Generation Silicon Carbide (SiC) Technology for High-Voltage Power Systems
Higher efficiency. Lower losses. Better thermal performance.
Toshiba’s 3rd-generation SiC MOSFETs and Schottky Barrier Diodes (SBDs) deliver high efficiency, lower switching losses, and stronger thermal performance across demanding power designs. From EV charging to renewable energy systems, SiC enables cooler, smaller, more efficient power architectures.
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Why SiC Matters in Modern Power Systems
Higher Efficiency Requirements
High-voltage systems face strict efficiency demands. Switching and conduction losses directly impact thermal design, reliability, and system size.
Increasing Thermal Stress
As power density rises, devices must operate reliably at elevated temperatures. SiC maintains stable characteristics where silicon devices degrade.
Voltage & Fast Switching Demands
Applications operating at 650–1200V require devices that support fast switching while maintaining safe voltage margins and reducing system stress.
Watch the Silicon Carbide (SiC) Technology Presentation
See how Silicon Carbide (SiC) devices improve efficiency, reduce switching losses, and deliver superior thermal behavior in high-voltage designs. This presentation explains key advantages using clear charts and visuals you won’t get from a datasheet alone.
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Why Watch This Video
A fast, visual explanation of the benefits of SiC technology—why it solves modern power-design challenges, and how Toshiba’s 3rd-generation devices outperform traditional silicon.
Lower switching losses and improved thermal margins
How Toshiba SiC Improves System Efficiency
Toshiba’s SiC MOSFETs and SBDs reduce conduction and switching losses, maintain stable thermal behavior, and enable higher switching frequencies. Designers benefit from simplified thermal management and smaller magnetics, providing measurable efficiency gains compared to Si IGBTs.