Silicon Carbide (SiC) Performance Advantages

Material-level benefits that translate to system-level efficiency.

Toshiba’s 3rd-generation SiC MOSFETs and Schottky Barrier Diodes (SBDs) offer measurable improvements in RDS(on), Qgd, switching energy, and high-temperature behavior—performance characteristics that directly influence system efficiency, reliability, and design flexibility.

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Comparison between Si devices and SiC devices)

Material advantages of SiC devices

Si vs SiC – Material Differences

Wider bandgap, higher breakdown field, and superior thermal conductivity give SiC devices inherent advantages over silicon. These material properties enable higher voltage operation, reduced switching losses, and stable performance across elevated temperatures.

3rd-Generation SiC Device Characteristics

Toshiba’s SiC MOSFETs exhibit lower RDS(on), improved Qgd behavior, and strong gate-drive robustness. These device-level enhancements help reduce switching losses, improve thermal margins, and simplify power system design.

Lower RDS(on), optimized switching, higher thermal performance

Watch the Silicon Carbide (SiC) Technology Presentation

See how Silicon Carbide (SiC) devices improve efficiency, reduce switching losses, and deliver superior thermal behavior in high-voltage designs. This presentation explains key advantages using clear charts and visuals you won’t get from a datasheet alone.

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Why Watch This Video

A fast, visual explanation of the benefits of SiC technology—why it solves modern power-design challenges, and how Toshiba’s 3rd-generation devices outperform traditional silicon.

Full portfolio overview

SiC MOSFET & SBD Lineup

Explore 650 V and 1200 V device options optimized for EV charging, industrial drives, renewable power, and high-density conversion systems.