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Lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK040Z65Z, TK065N65Z, TK065Z65Z, TK090N65Z, TK090Z65Z, TK090A65Z

Product News 2019-05

The package photograph of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK040Z65Z, TK065N65Z, TK065Z65Z, TK090N65Z, TK090Z65Z, TK090A65Z.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched six 650 V new generation[1] super junction N-ch power MOSFET products in the DTMOSVI series: “TK040Z65Z”,“TK065N65Z”, “TK065Z65Z”, “TK090N65Z”, “TK090Z65Z” and “TK090A65Z” for switching power supplies of industrial equipment such as data centers and power conditioners of photovoltaic generators to expand the lineup in terms of packages and On-resistance.

The new generation DTMOSVI series has reduced the values of “drain-source On-resistance x gate-drain charge”—a figure of merit—by about 40 % compared with the previous generation DTMOSIV-H series, allowing the efficiency of switching power supplies to be improved by about 0.36 %[2].

Toshiba will continue expanding its product lineup to meet market trends and help improve the efficiency of power supplies.

Notes:
[1] As of March 2019, from a survey by Toshiba
[2] As of March 2019, values measured by Toshiba (When TK040N65Z in the new series is compared with TK62N60X in the conventional series by using a PFC circuit with an output power of 2500 W.)

Features

The values of “drain-source On-resistance x gate-drain charge” have been reduced by about 40 %[3] to improve the efficiency of switching power supplies.

Notes:
[3] Comparison with the conventional generation DTMOSIV-H series

Applications

Switching power supply for industrial equipment

  • Data centers (Server power supplies, etc.)
  • Power conditioners for photovoltaic generators
  • Uninterruptible power systems

Product Specifications

(@Ta=25 °C)

Part
number
Package Polarity Absolute
maximum ratings
Drain-source
On-resistance
RDS(ON)
max
@VGS=10 V
(Ω)
Total
gate
charge
Qg
typ.
(nC)
Gate-
drain
charge
Qgd
typ.
(nC)
Input
capacitance
Ciss
typ.
(pF)
Conventional
generation
series
part number
(DTMOSIV-H)
Drain-
source
voltage
VDSS
(V)
Drain
current
(DC)
ID
(A)
TO-247-4L N-ch 650 57 0.040 105 27 6250
TO-247 650 38 0.065 62 17 3650
TO-247-4L 650 38 0.065 62 17 3650
TO-247 650 30 0.090 47 12 2780
TO-247-4L 650 30 0.090 47 12 2780
TO-220SIS 650 30 0.090 47 12 2780
TO-247 650 57 0.040 105 27 6250

Notes:
[4] DTMOSIV series
[5] Existing new generation DTMOSVI series product

Internal Circuits

The illustration of internal circuits of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK040Z65Z, TK065N65Z, TK065Z65Z, TK090N65Z, TK090Z65Z, TK090A65Z.

Application Circuit Examples

The illustration of application circuit examples of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK040Z65Z, TK065N65Z, TK065Z65Z, TK090N65Z, TK090Z65Z, TK090A65Z.

The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

Comparison of Characteristics[1]

The illustration of comparison of characteristics of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK040Z65Z, TK065N65Z, TK065Z65Z, TK090N65Z, TK090Z65Z, TK090A65Z.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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