Power Semiconductors

Semiconductor device that controls the flow of electricity to reduce power loss. Personal computers and other electronic equipment constantly lose power when they operate. Power loss can be kept low by using high performance power semiconductors. High performance power semiconductor can realize saving energy for not only Personal Computers, but also Smartphones, Automotive application, Trains, and Electrical substations.

Lineup

SiC Power Devices

SiC MOSFETs
Toshiba’s 1200V SiC MOSFETs offers high-speed switching and low ON-resistance making it excellent for high-power, high-efficiency industrial power supplies, low-loss solar inverters and UPS.
Details
SiC Schottky Barrier Diodes
Toshiba offers 650V products, 1200V products Silicon Carbide Schottky Barrier Diodes (SiC SBD) that achieve low forward voltage characteristics (VF).
Details
SiC MOSFETs Modules
Our SiC MOSFETs modules have high-speed switching properties, and use SiC (silicon carbide), a new material optimized for low-loss and miniaturization of power converters for the industry, such as inverters and converters for railway vehicles and photovoltaic inverters.
Details

MOSFETs

12V - 300V MOSFETs
Toshiba has used each successive generation of trench-gate structures and fabrication processes to steadily reduce the drain-source on-resistance, RDS(ON), of its low-voltage power MOSFETs.
Details
400V - 900V MOSFETs
Toshiba offers super-junction MOSFET series suitable for high-output power supply applications and D-MOS (double-diffused) MOSFET series suitable for low-output power supply applications.
Details
Automotive MOSFETs
Toshiba offers an extensive line of power devices such as power MOSFETs for various automotive applications, including 12V battery and motor control systems.
Details

IGBTs/IEGTs

IGBTs
Toshiba discrete IGBTs contribute energy savings in applications, such as IH cooking equipment, rice cookers, kitchen microwaves, refrigerators, washing machines, air-conditioners.
Details
IEGT (PPI)
The outstanding turn-off performance and the wide safe operating area of IEGTs make it possible to reduce the power consumption, shrink the size and improve the efficiency of equipment.
Details

Diodes

Switching Diodes
Toshiba offers 1-circuit to 4-circuit products, with forward current ranging from 80 to 500 mA, in small surface-mount packages suitable for high-density board assembly.
Schottky Barrier Diodes
Toshiba offers superior low-VF and low-IR types ranging from general-purpose to power-line products. These can contribute to greater power efficiency and power saving.
Details
Zener Diodes
Zener diodes are available in a wide range of Zener voltage specifications extending from 5.6 V to 82 V. Their extensive application fields include both consumer and industrial electronics.
Details
Rectifier Diodes
Diodes with reverse voltage ranging from 200 to 1000 V and an average forward current ranging from 0.5 to 3 A are offered in small and medium-size surface-mount packages.

Technical Articles

3rd generation Silicon Carbide(SiC) MOSFETs
Toshiba's 3rd generation Silicon Carbide (SiC) MOSFETs introduces a selection of both 650V and 1200V voltage products. In common with 2nd generations, Toshiba's newest generation of MOSFETs include a built-in SiC Schottky Barrier Diode (SBD) with a low forward voltage (VF) of -1.35V (typ.), placed in parallel with the PN diode in the SiC MOSFETs, to suppress fluctuation in RDS(on) thereby enhancing reliability. Furthermore, Toshiba’s advanced SiC process[1] has greatly improved our on-resistance per unit area RonA, and the performance index Ron*Qgd, which indicates switching characteristics, compared to 2nd generation products. Also, it has easy to design gate drive circuit, and you can prevent malfunctions due to switching noise.
Toshiba's 3rd generation SiC MOSFETs provides lower power consumption and supports higher power density for applications such as switching power supplies (servers for data centers, communication equipment, etc.), uninterruptible power supplies (UPS), PV inverters, EV charging stations, etc.
Details
3rd generation Silicon Carbide(SiC) MOSFETs
3rd generation SiC Schottky barrier diode (SBD)
It adopts the new schottky metal, and it is equipped with 3rd generation SiC SBD chip, which optimized junction barrier schottky (JBS) structure of 2nd generation. As a result, we have achieved industry-leading lowest forward voltage 1.2V (Typ.) for 650V products, and 1.27V (Typ.) for 1200V products. For the 650V products, the 3rd generation products have improved the trade-offs between forward voltage and total capacitive charge, and the trade-offs between forward voltage and reverse current compared with the 2nd generation products. This reduces power dissipation and contributes to high efficiency of equipment.
Details
3rd generation SiC Schottky barrier diode (SBD)
Features of SiC MOSFET Modules
Our SiC MOSFET modules achieve high reliability, wide gate-to-source voltage, and high gate threshold voltage. In addition, the high heat tolerance and low inductance package brings out the performance of SiC sufficiently.
MOSFETs / SiC MOSFET Modules
Details
Features of Toshiba SiC MOSFET Modules
Compared to IGBT module, the low-loss characteristics of SiC MOSFET module can reduce the total loss (switching loss + conduction loss). High-speed switching and low-loss operation also reduce the size of the filter and transformer and heat sink, enabling a compact, lightweight system.
MOSFETs / SiC MOSFET Modules
Details
High withstand voltage (reverse voltage) characteristics of SiC SBDs
A device with a high breakdown voltage has been realized with dielectric breakdown field strength nearly 10 times higher than that of Si.
Diodes / SiC Schottky Barrier Diodes
Details
SiC SBD that achieves low switching losses
By using SiC, a device with high withstand voltage and low switching loss (low reverse recovery charge) has been realized.
Diodes / SiC Schottky Barrier Diodes
Details
Contributes to high efficiency and low loss of high output power supply
Significantly reduced recovery loss compared to FRD: fast recovery diodes
Diodes / SiC Schottky Barrier Diodes
Details
Improved JBS structure to reduce the leakage current and increase the surge current capability
The improved JBS structure has been applied to improve the leakage current of the SBD and the surge current capacity.
Diodes / SiC Schottky Barrier Diodes
Details
3-Phase AC 400 V Input PFC Converter Reference Design
Using 2nd Generation SiC MOSFETs to improve the efficiency of power supply systems
Details
5 kW Isolated Bidirectional DC-DC Converter Reference Design
Using 2nd Generation SiC MOSFETs to improve the efficiency of power supply systems
Details
Open a new door for power supply with Toshiba’s SiC MOSFETs
SiC MOSFETs support downsizing and low-loss power supplies
Product
Details
What are the merits of using SiC MOSFETs?
Toshiba SiCMOS achieves low on-resistance and high-speed switching compared with Si IGBT.
Details
2nd Generation SiC MOSFETs/IGBT Switching Loss Comparison
Toshiba’s TW070J120B 1200V SiC MOSFETs features low ON-resistance, low input capacitance and low total gate charge enabling it to achieve high switching speeds and reduced power consumption.
Details
2nd Generation Features of SiC MOSFETs
Since the dielectric breakdown strength of SiC (silicon carbide) is about 10 times as high as that of Si (silicon), SiC power devices can offer a high withstand voltages and low on-resistance.
Details
SiC devices suitable for power supply circuits
SiC Schottky barrier diodes (SBDs) have achieved high breakdown voltages for SBDs, which are difficult to achieve with Si materials, and significantly reduced reverse-recovery times (charges) that could not be achieved with p-n junction diodes, such as Si-FRD(Fast Recovery Diode).
Diodes / SiC Schottky Barrier Diodes
Details
U-MOS X-H series 150 V MOSFET ideal for efficient switching power supplies
Toshiba Electronic Devices & Storage Corporation has developed U-MOS X-H 150 V process power MOSFET (metal-oxide-semiconductor field-effect transistor) series with dramatically improved on-resistance and charge characteristics for switching power supplies that require high-efficiency, such as power supplies for telecommunication base stations and power supplies for datacenter servers.
MOSFETs / 12V - 300V MOSFETs
Details
Efficiency Improvement by Multi-Level Inverter with 150 V MOSFET
Inverter to control motors is necessary for industrial robotic applications that contribute factory automation. We introduce the approach of multi-level inverter method with 150 V MOSFET on behalf of 2-level inverter method with 600 V MOSFET to improve efficiency.
MOSFETs / 12V - 300V MOSFETs
Details
Contributes to Higher Efficiency of switched-mode power supply
Aggressive reduction of MOSFET switching loss
MOSFETs / 400V - 900V MOSFETs
Details
Contributes to reducing loss of switching power supplies
80V N-Channel MOSFET with improved trade-off between on-resistance and charge characteristics
MOSFETs / 12V - 300V MOSFETs
Details
The U-MOSⅨ-H series are the ideal MOSFETs for improving the efficiency of switched-mode power supplies.
The U-MOSⅨ-H series utilizes excellent high-speed performance and offers low-loss products for various topologies of switching power supplies.
MOSFETs / 12V - 300V MOSFETs
Details
The U-MOSⅨ-H series has a greatly improved figure of merit that represents losses.
The U-MOSⅨ-H series incorporates outstanding trench process and packaging technologies to provide the industry’s best-in-class performance.
MOSFETs / 12V - 300V MOSFETs
Details
Switching noise reduction by snubber circuits (Low Spike Technology)
The U-MOSⅨ-H series have a lineup of low spike type with snubber constants optimized and high efficiency type, enabling products to be selected according to their objectives.
MOSFETs / 12V - 300V MOSFETs
Details
Toshiba's MOSFETs are ideal for low-voltage drive equipment.
Toshiba's MOSFETs supports both of low -voltage driving from 1.2 V and low on on-resistance by applying fine pitch process.
MOSFETs / 12V - 300V MOSFETs
Details
State-of-the-art super junction MOSFET DTMOSVI
The DTMOS series has a super junction structure capable of reducing the resistance of the drift layer even though it has a high withstand voltage. Our fourth-generation DTMOSIV series has adopted a single-epi process to achieve both low on-resistance and high-speed switching.
MOSFETs / 400V - 900V MOSFETs
Details
DSOP Advance, a Thermally Enhanced Double Side Cooling Package, improves the efficiency of power supply for high-current applications.
DSOP Advance packages reduce temperature rise during high current flow by heat dissipation and improve power density and efficiency by downsizing the power supply circuits.
MOSFETs / 12V - 300V MOSFETs
Details
State-of-the-art double-diffusion MOSFET(D-MOS)π-MOSIX series
The π-MOS series employs a D-MOS (Double Diffusion MOS) structure and the lineup offers a wide range of voltages from 200 V to 900 V.
MOSFETs / 400V - 900V MOSFETs
Details
A wide choice of product variations ranging from ultra-small packages to general-purpose packages.
Toshiba's MOSFETs realize small size and low on-resistance by adopting advanced technology.
MOSFETs / 12V - 300V MOSFETs
Details
Commercialization of new TO-247-4L packaging 600-V Super Junction Power MOSFET (DTMOSIV-H Series)
The TO-247-4L package can reduce the effect of the inductances of the source wires inside the package, thereby further enhancing the high-speed switching performance of the MOSFET chips.
MOSFETs / 400V - 900V MOSFETs
Details
Pch MOSFET series using latest process
Excellent trench technologies have achieved low on-resistance characteristics and a wide range of driving voltages from 1.2 V to 10 V.
MOSFETs / 12V - 300V MOSFETs
Details
Switching characteristics of the N-ch U-MOS series
The U-MOSVIII series suppresses VDS ringing by tuning Coss and Rs, thereby reducing EMI noise.
MOSFETs / Automotive MOSFETs
Details
Process Trends of Automotive MOSFETs
The combination of small-geometry trench process technology and low-resistance packaging technology, such as Cu connector bonding, achieves industry-leading low on-resistance.
MOSFETs / Automotive MOSFETs
Details
Package Trends of Automotive MOSFETs
DPAK+, DSOP Advance (WF), SOP Advance (WF), and TSON Advance (WF) adopt Cu connector structures, realizing high current conduction capability.
MOSFETs / Automotive MOSFETs
Details
Automotive applications drive miniaturization of small MOSFET sets
This feature combines trench microfabrication and low-resistance packaging technologies to replace conventional power MOSFET areas, thereby contributing to the miniaturization of power sets.
MOSFETs / Automotive MOSFETs
Details
Low radiated emission noise
Optimized chip design achieves low radiated emission noise. Generally speaking, lower external gate resistance (RG) reduces turn-off switching loss and heightens radiated emission noise. Switching loss can be lowered by improving the trade-off between turn-off switching loss and radiated emission noise.
IGBTs/IEGTs / IGBTs
Details
Wide safe operation area
The optimized chip design of the new product expands safe operation into higher voltages. This prevents applications from destruction by malfunction at transient condition.
IGBTs/IEGTs / IGBTs
Details
Short-circuit current reduction
Short-circuit current is reduced by lowering collector-emitter saturation current. Short-circuit current is reduced in voltage resonant circuits of IH application.
IGBTs/IEGTs / IGBTs
Details
Low loss (FRD)
Low loss FRD is achieved by lowering conduction loss, contributing energy savings in applications.
IGBTs/IEGTs / IGBTs
Details
Low loss (IGBT)
Low loss is achieved by reducing turn-off switching loss, contributing energy savings in applications.
IGBTs/IEGTs / IGBTs
Details
Press-Pack package
Multiple IEGT chips are placed in an array on the same plane, and individual IEGT chips are uniformly pressed from both sides using a molybdenum plate. The collector and emitter electrodes of each IEGT chip are brought into contact with the corresponding copper electrodes of the press pack enclosure via the molybdenum plate by applying mechanical pressure. This not only makes electrical connections and but also allows heat dissipation.
IGBTs/IEGTs / IEGTs
Details
Principle of Operation
Figure A shows the cross-sectional structure of a conventional IGBT and the carrier distribution in the N-base region. The carrier concentration decreases monotonically across the N-base region from the collector electrode to the emitter electrode. In order to increase the collector-emitter voltage of an IGBT, a deep N-base region is necessary between the collector and emitter electrodes.
IGBTs/IEGTs / IEGTs
Details
Schottky Barrier Diodes
A Schottky barrier diode is a semiconductor diode formed by the junction of a semiconductor with a metal.
Diodes / Schottky Barrier Diodes
Details
Improved junction barrier Schottky (JBS) structure to reduce the leakage current and increase the surge current capability
While Schottky barrier diodes (SBDs) have advantages such as very short reverse recovery time time (trr) and low forward voltage (VF), they have disadvantages such as high leakage current. Toshiba lineup some SBDs of the product which adopted the improved structure.
Diodes / Schottky Barrier Diodes
Details
Zener diode for overvoltage protection
Zener diodes are suitable for protecting power supply lines, power supply control lines, and can protect internal circuits and ICs from switching surge (overvoltages) induced by hot plugs, etc.
Diodes / Zener Diodes
Details
Zener diode that protects from various surges of overvoltage pulse
A Zener diode is characterized by its ability to protect an object from transient overvoltage pulses as well as overvoltage pulses close to DC, which are difficult to protect against with ESD protection diodes.
Diodes / Zener Diodes
Details

Catalogs

Name Date
Name Date
Name Date

Application Notes

Name Date
Name Date
Name Date
Name Date
Name Date

Technical topics

Reference Design

3-Phase Inverter Using SiC MOSFET
This reference design provides design guide, data and other contents of the 3-phase inverter using 1200 V SiC MOSFET. It drives AC 440V motors.
Details
PCB Photo (example)
1.6 kW Server Power Supply (Upgraded)
Thanks to Toshiba’s latest power devices and digital isolator, this 1U size and 12 V output 1.6 kW server power supply achieves higher efficiency at whole load than the existing reference design which uses the same circuit topology. Design files and guides for circuit design and operation are available as reference design.
Details
1.6 kW T-Type 3-Level PFC Power Supply
1.6 kW T-Type 3-Level PFC Power Supply
This reference design provides design guide, data and other contents of 1.6kW AC-DC converter power supply using T-Type 3-Level power factor correction (PFC) circuit.
Details
Circuit diagram of single phase PFC power supply basic simulation circuit.
Single Phase PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing single phase PFC power supply.
Details
Circuit diagram of interleaved PFC power supply basic simulation circuit.
Interleaved PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing interleaved PFC power supply.
Details
Circuit diagram of bridgeless PFC power supply basic simulation circuit.
Bridgeless PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing bridgeless PFC power supply.
Details
Features of 1.6kW, 80Plus Platinum class, high efficiency server AC-DC power supply .
1.6kW, 80Plus Platinum Class, High efficiency Server AC-DC Power supply
This reference design provides design guide, data and other contents of 1.6kW 80Plus Platinum class power supply using Semi-bridgeless/Isolated phase shift full bridge.
Details
Automotive Brushed DC Motor Control Circuit Using TB9103FTG
The Automotive Brushed DC Motor Control Circuit Using TB9103FTG can control two motors in half-bridge mode or one motor in H-bridge mode. The Motor can be controlled using onboard switches or an external MCU. This reference design provides design guide, data, and other contents.
Details
This is a picture of Gate Drive for SiC MOSFET Module.
Gate Drive for SiC MOSFET Module
In recent years, SiC MOSFET modules have become popular compared to conventional IGBT modules as they have a smaller size and lower loss, which is useful in power conversion applications such as industrial motor drives and railway inverters. This is a gate drive circuit with various protection functions which can safely drive a SiC MOSFET module.This design uses the TLP5231 pre-driver coupler, which is capable of high-current gate drive with external buffer MOSFETs and has various built-in protection functions to implement the isolated-gate drive of a high-current/high-voltage SiC MOSFET module. It consists of two channels, high-side and low-side, on a 62mm x 100mm board and can be installed on Toshiba dual MOSFET modules. Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.
Details
PCB Photo (example)
48 V Bus Compatible 1.2 V/100 A Double Step-Down DC-DC Converter
In recent years, saving energy in servers has become an urgent issue because of the rapid increase in server power consumption. To resolve the issue, Toshiba has developed this 48V bus compatible DC-DC converter with 1.2V/100A output.This design is a two-stage DC-DC converter capable of delivering 1.2V/100A to various devices from the 48V bus line. Since each stage uses Toshiba power MOSFETs that have good balance between on-resistance and charge characteristics, it achieves high efficiency. Design tips on each portion of the circuit, method of operation, and design information such as circuit diagrams and PCB patterns are available, please use them for your design.
Details
PCB Photo (example)
1.6 kW Server Power Supply (Upgraded)
Thanks to Toshiba’s latest power devices and digital isolator, this 1U size and 12 V output 1.6 kW server power supply achieves higher efficiency at whole load than the existing reference design which uses the same circuit topology. Design files and guides for circuit design and operation are available as reference design.
Details
PCB photo example of Power multiplexer circuit
Power Multiplexer Circuit Using Common-Drain MOSFET
This power multiplexer circuit with 2 inputs and 1 output is realized on a small board. A new power multiplexer circuit usign common-drain MOSFET has been added to the already developed power multiplexer circuit reference design. These reference circuits allow switching between BBM and MBB modes by combining optimal devices such as MOSFET gate driver ICs and zener diodes from our diverse product lineup.
Details
3-Phase Inverter Using SiC MOSFET
This reference design provides design guide, data and other contents of the 3-phase inverter using 1200 V SiC MOSFET. It drives AC 440V motors.
Details
Automotive Buck-Boost DC-DC Converter for USB PD
This reference design provides design guide, data and other contents of Automotive Buck-Boost DC-DC Converter for USB PD.
Details
PCB Photo (example)
3-Phase Multi-Level Inverter using MOSFET
This reference design provides design guide, data and other contents of the 3-Phase Multi-Level Inverter with 5 level output. It uses 150 V MOSFETs to drive AC 200 V Motor.
Details
PCB Photo (example)
1 kW Non-Isolated Buck-Boost DC-DC Converter for Telecommunication Equipment
This reference design provides design guide, data and other contents of 1 kW Non-Isolated Buck-Boost DC-DC Converter for Telecommunication Equipment.
Details
1.6 kW T-Type 3-Level PFC Power Supply
1.6 kW T-Type 3-Level PFC Power Supply
This reference design provides design guide, data and other contents of 1.6kW AC-DC converter power supply using T-Type 3-Level power factor correction (PFC) circuit.
Details
PCB photo example of Power multiplexer circuit
Power multiplexer circuit
In this reference design, a Power multiplexer circuit with 2 input and 1 output is implemented on a small PCB. MOSFET gate driver ICs, eFuse ICs, zener diodes and small package MOSFETs selected from Toshiba's diverse lineup are used create ideal diode like characteristics with BBM and MBB switching.
Details
Board photo of 100 W LLC DC-DC Converter
100 W LLC DC-DC Converter
This reference design provides design guide, data and other contents of 100 W LLC DC-DC Converter which uses Zero Volt Switching implemented using LLC resonance.
Details
Exterior photo of 200 W active clamp forward DC-DC converter.
200 W Active Clamp Forward DC-DC Converter
This reference design provides design guide, data and other contents of 1 kW server power supply using phase shifetd full-bridge DC-DC converter.
Details
Photo of non-isolated buck DC-DC converter.
Non-Isolated Buck DC-DC Converter
This reference design provides design guide, data and other contents of multiple non-isolated buck DC-DC converter power supplies. Multiple variations of the power supply are optimized for various outputs, loads and board mounting areas.
Details
Photo of Matrix LED Headlight
Matrix LED Headlight
This reference design provides design guide, data and other contents of LED Matrix Headlight. It controls the lighting of multiple LEDs independently according to the situation.
Details
Features of 500 W server power supply using TOLL package DTMOS.
500 W Server Power Supply using TOLL Package DTMOS
This reference design provides design guide, data and other contents of 500 W server power supply using continuous current mode PFC and LLC DC-DC converter. Using TOLL package MOSFET in the PFC circuit, decreases the overall size and increases the power density.
Details
Photo of 100 W power supply for LED Lighting.
100 W Power Supply for LED Lighting
This reference design provides design guide, data and other contents of the constant current 100 W Power Supply for LED Lighting with PFC and a wide range of input voltage i.e. AC90V to 264V.
Details
Exterior photo of 1 kW full-bridge DC-DC converter.
1 kW Full-Bridge DC-DC Converter
This reference design provides design guide, data and other contents of 1 kW server power supply using phase shifetd full-bridge DC-DC converter.
Details
Exterior photo of 1.6 kW 48 V output telecommunication equipment power supply.
1.6 kW 48 V Output Telecommunication Equipment Power Supply
This reference design provides design guide, data and other contents of 1.6 kW 48 V output power supply using semi-bridgeless PFC and isolated phase-shift full-bridge DC-DC converter.
Details
Circuit of active clamp forward DC-DC power supply basic simulation circuit.
Active Clamp Forward DC-DC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing Active Clamp Forward topology of DC-DC power supply.
Details
Circuit of active clamp forward AC-DC power supply basic simulation circuit.
Active Clamp Forward AC-DC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing Active Clamp Forward topology of AC-DC power supply.
Details
Circuit of Full-Bridge DC-DC power supply basic simulation circuit.
Full-Bridge DC-DC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing Full-Bridge topology of DC-DC power supply.
Details
Circuit of Full-Bridge AC-DC power supply basic simulation circuit.
Full-Bridge AC-DC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing Full-Bridge topology of AC-DC power supply.
Details
Circuit of Non-isolated Synchronous Buck DC-DC power supply basic simulation circuit.
Non-isolated Synchronous Buck DC-DC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing Non-isolated Synchronous Buck DC-DC power supply.
Details
Circuit of Half-Bridge (HB) AC-DC power supply basic simulation circuit.
Half-Bridge (HB) AC-DC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing Half-Bridge (HB) topology of AC-DC power supply.
Details
Circuit of Half-Bridge (HB) DC-DC power supply basic simulation circuit.
Half-Bridge (HB) DC-DC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing Half-Bridge (HB) topology of DC-DC power supply.
Details
HVAC application of photovoltaic-output photocoupler and MOSFET as replacement for mechanical relay.
Photovoltaic-Output Photocoupler and MOSFET as Replacement for Mechanical Relay
Solid state relay with photovoltaic-output coupler, TLP3906, and MOSFET, TPH1R306PL. Describes design guidance of solid state relay circuit as replacement of mechanical relay.
Details
Features of 1.2V/100A output DC-DC converter compliant with 48V bus voltage.
1.2V/100A Output DC-DC Converter Compliant with 48V Bus Voltage
This reference design provides specification, block diagram and PCB layout data of 1.2V/100A output isolated DC-DC converter which convert 48V bus voltage to 1.2V directly.
Details
Circuit of phase-shift full bridge (PSFB) AC-DC power supply basic simulation circuit.
Phase-Shift Full Bridge (PSFB) AC-DC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing phase-shift full bridge (PSFB) topology of AC-DC power supply.
Details
Circuit of flyback DC-DC power supply basic simulation circuit.
Flyback DC-DC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing flyback topology of DC-DC power supply.
Details
Circuit of flyback AC-DC power supply basic simulation circuit.
Flyback AC-DC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing flyback topology of AC-DC power supply.
Details
Features of 300W Isolated DC-DC converter.
300W Isolated DC-DC Converter
This reference design provides specification, block diagram and PCB layout data of 300W isolated DC-DC converter which is small size and suitable for consumer applications.
Details
Circuit diagram of single phase PFC power supply basic simulation circuit.
Single Phase PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing single phase PFC power supply.
Details
Circuit diagram of interleaved PFC power supply basic simulation circuit.
Interleaved PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing interleaved PFC power supply.
Details
Circuit diagram of bridgeless PFC power supply basic simulation circuit.
Bridgeless PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing bridgeless PFC power supply.
Details
Block diagram of 200W AC-DC power supply.
200W AC-DC Power Supply
This reference design provides specification, block diagram and PCB layout data of DC24V/200W AC-DC power supply suitable for consumer applications and embedded power supply.
Details
Battery charger circuit of MOSFET Driver IC application and circuit of the TCK401G.
MOSFET Driver IC Application and Circuit of the TCK401G
This reference design provides technical information on slew rate control, auto discharge and other built-in functions for designing load switch circuit suitable for USB-PD.
Details
Battery charger circuit of MOSFET Driver IC application and circuit of the TCK402G.
MOSFET Driver IC Application and Circuit of the TCK402G
This reference design provides technical information on slew rate control, auto discharge and other built-in functions for designing load switch circuit suitable for USB-PD.
Details
Device and prastic inductance of PCB trace of parallel operation of MOSFET(TPH1R306PL) application circuit.
Parallel Operation of MOSFET(TPH1R306PL) Application Circuit
This reference design provides example of simulation models/circuit and results for parallel operation using 60V MOSFET to increase output power.
Details
Device and prastic inductance of PCB trace of parallel operation of MOSFET(TK62N60X) application circuit.
Parallel Operation of MOSFET(TK62N60X) Application Circuit
This reference design provides example of simulation models/circuit and results for parallel operation using 600V MOSFET to increase output power.
Details
Device and prastic inductance of PCB trace of MOSFET 4 leads package TO-247-4L(TK25Z60X) application circuit.
MOSFET 4 Leads Package TO-247-4L(TK25Z60X) Application Circuit
This reference design provides example circuit for maximize switching performance and efficiency using 4 lead MOSFET package (TO-247-4L) which reduces package inductance.
Details
Device and prastic inductance of PCB trace of MOSFET4 leads package DFN8x8(TK25V60X) application circuit.
MOSFET4 Leads Package DFN8x8(TK25V60X) Application Circuit
This reference design provides example circuit for maximize switching performance and efficiency using 4 lead MOSFET package (DFN8x8) which reduces package inductance.
Details
Short circuit detection circuit block diagram of single-output High-Side N-Channel Power MOSFET Gate Driver application and circuit of the TPD7104AF.
Single-Output High-Side N-Channel Power MOSFET Gate Driver Application and Circuit of the TPD7104AF
This reference design provides examples of application circuit and simulation for TPD7104AF which features short load protection, reverse power connection protection and others.
Details
Features of 1.6kW, 80Plus Platinum class, high efficiency server AC-DC power supply .
1.6kW, 80Plus Platinum Class, High efficiency Server AC-DC Power supply
This reference design provides design guide, data and other contents of 1.6kW 80Plus Platinum class power supply using Semi-bridgeless/Isolated phase shift full bridge.
Details
Automotive Brushed DC Motor Control Circuit Using TB9103FTG
The Automotive Brushed DC Motor Control Circuit Using TB9103FTG can control two motors in half-bridge mode or one motor in H-bridge mode. The Motor can be controlled using onboard switches or an external MCU. This reference design provides design guide, data, and other contents.
Details
Automotive Buck-Boost DC-DC Converter for USB PD
This reference design provides design guide, data and other contents of Automotive Buck-Boost DC-DC Converter for USB PD.
Details
Photo of Matrix LED Headlight
Matrix LED Headlight
This reference design provides design guide, data and other contents of LED Matrix Headlight. It controls the lighting of multiple LEDs independently according to the situation.
Details
Photo of Inverter Circuit for IH Cooker
Inverter Circuit for IH Cooker
This reference design provides design guide, data and other contents of Inverter Circuit for IH Cooker based on Voltage-Resonant Soft Switching .
Details
Inverter application example of smart gate driver coupler TLP5214A inverter application.
Smart Gate Driver Coupler TLP5214A Inverter Application
This reference design provides example circuits, design guide of built-in functions and thermal design guide for applying TLP5214A to inverter circuit as gate driver.
Details
PCB Photo (example)
1.6 kW Server Power Supply (Upgraded)
Thanks to Toshiba’s latest power devices and digital isolator, this 1U size and 12 V output 1.6 kW server power supply achieves higher efficiency at whole load than the existing reference design which uses the same circuit topology. Design files and guides for circuit design and operation are available as reference design.
Details
PCB photo example of Power multiplexer circuit
Power Multiplexer Circuit Using Common-Drain MOSFET
This power multiplexer circuit with 2 inputs and 1 output is realized on a small board. A new power multiplexer circuit usign common-drain MOSFET has been added to the already developed power multiplexer circuit reference design. These reference circuits allow switching between BBM and MBB modes by combining optimal devices such as MOSFET gate driver ICs and zener diodes from our diverse product lineup.
Details
PCB Photo (example)
Application Circuit of Low Power Consumption Op-Amp TC75S102F
Application circuits of low power consumption Op-Amp TC75S102F for use with various sensors. These application circuits can be used for devices requiring long battery life, IoT sensor, energy harvesting, etc.
Details
1.6 kW T-Type 3-Level PFC Power Supply
1.6 kW T-Type 3-Level PFC Power Supply
This reference design provides design guide, data and other contents of 1.6kW AC-DC converter power supply using T-Type 3-Level power factor correction (PFC) circuit.
Details
PCB photo example of Power multiplexer circuit
Power multiplexer circuit
In this reference design, a Power multiplexer circuit with 2 input and 1 output is implemented on a small PCB. MOSFET gate driver ICs, eFuse ICs, zener diodes and small package MOSFETs selected from Toshiba's diverse lineup are used create ideal diode like characteristics with BBM and MBB switching.
Details
Features of 1.2V/100A output DC-DC converter compliant with 48V bus voltage.
1.2V/100A Output DC-DC Converter Compliant with 48V Bus Voltage
This reference design provides specification, block diagram and PCB layout data of 1.2V/100A output isolated DC-DC converter which convert 48V bus voltage to 1.2V directly.
Details
Features of 300W Isolated DC-DC converter.
300W Isolated DC-DC Converter
This reference design provides specification, block diagram and PCB layout data of 300W isolated DC-DC converter which is small size and suitable for consumer applications.
Details
Circuit diagram of single phase PFC power supply basic simulation circuit.
Single Phase PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing single phase PFC power supply.
Details
Circuit diagram of interleaved PFC power supply basic simulation circuit.
Interleaved PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing interleaved PFC power supply.
Details
Circuit diagram of bridgeless PFC power supply basic simulation circuit.
Bridgeless PFC Power Supply Basic Simulation Circuit
This reference design provides OrCAD® based simulation circuit, simulation results and design guide. This is for designing bridgeless PFC power supply.
Details
Main switch of a rapid-charging circuit of load switch IC TCK301G, TCK302G, TCK303G application & circuit.
Load Switch IC TCK301G, TCK302G, TCK303G Application & Circuit
This reference design provides example circuit of the load switch with low on resistance and built-in in-rush current control function. It is suitable for battery used application.
Details
Battery charger circuit of load switch IC TCK321G, TCK322G, TCK323G application & circuit.
Load Switch IC TCK321G, TCK322G, TCK323G Application & Circuit
This reference design provides document with input selection characteristics. The load switch has small package and low on resistance suitable for battery charging application.
Details
Features of 1.6kW, 80Plus Platinum class, high efficiency server AC-DC power supply .
1.6kW, 80Plus Platinum Class, High efficiency Server AC-DC Power supply
This reference design provides design guide, data and other contents of 1.6kW 80Plus Platinum class power supply using Semi-bridgeless/Isolated phase shift full bridge.
Details

News / Latest information

23-10-2024

Lineup Expansion of 150V N-Channel Power MOSFETs Using a New Generation Process that Helps Reduce Power Consumption of Power Supplies

  • Products/Technology

16-10-2024

Small MOSFETs Bring Lower Power Consumption and Longer Operating Times to Battery-Driven Devices

  • Products/Technology

21-08-2024

Lineup Expansion of -40V/-60V Automotive P-Channel Power MOSFETs for Stable Operation of Automotive Equipment

  • Products/Technology

31-07-2024

Lineup Expansion of 600V Super Junction Structure N-Channel Power MOSFETs that Help Improve Efficiency of Power Supplies

  • Products/Technology

26-07-2024

Toshiba Develops Technology that Can Mitigate Parasitic Oscillation Between Parallel-Connected Chips in SiC Power Modules with Minimal Gate Resistance that Support High Speed Switching

  • Products/Technology

17-07-2024

Expanded Lineup of Power MOSFETs with High-Speed Diodes that Help to Improve Efficiency of Power Supplies

  • Products/Technology
Read More

Simulation

Motor Control and Driver Circuit Library
Read More
Switched Mode Power Supply Library
Read More
Online Circuit Simulator
Read More
EDA/CAD Model Library
Read More

Contacts

Technical inquiry

Contact us

Contact us

Frequently Asked Questions

FAQs

Related information

A new window will open