An Insulated Gate Bipolar Transistor, IGBT, and an Injection Enhanced Gate Transistor, IEGT, are devices that switch power on and off between a collector and emitter by controlling the voltage between the gate and emitter in the same way as MOSFET.
Toshiba IGBT and IEGT can be used in a wide range of applications, from home appliances to infrastructure equipment.
Expanded lineup with a discrete IGBT rated at 1350 V/30 A that helps reduce power consumption of home appliances : GT30N135SRA
Toshiba Electronic Devices & Storage Corporation Announces Major Investment in Power Devices Business
A discrete IGBT that helps reduce the power consumption and radiated emissions of home appliances : GT30J110SRA
Toshiba’s IGBT and FWD Compact Modeling Realizes Highly Accurate Prediction of Power Efficiency and EMI Noise for Multiple External Condition
Toshiba’s New Discrete IGBT for Voltage Resonance Circuits Contributes to Lower Power Consumption and Easier Design of Equipment