An Insulated Gate Bipolar Transistor, IGBT, and an Injection Enhanced Gate Transistor, IEGT, are devices that switch power on and off between a collector and emitter by controlling the voltage between the gate and emitter in the same way as MOSFET.
Toshiba IGBT and IEGT can be used in a wide range of applications, from home appliances to infrastructure equipment.
Low EMI Switching
Toshiba to Expand Power Semiconductor Production Capacity with 300-millimeter Wafer Fabrication Facility
New press pack IEGT that contributes to size reduction and higher efficiency of industrial equipment such as high voltage direct current transmission systems and inverters for industrial motor drives
Expanded lineup with a discrete IGBT rated at 1350 V/30 A that helps reduce power consumption of home appliances : GT30N135SRA
Toshiba Electronic Devices & Storage Corporation Announces Major Investment in Power Devices Business
A discrete IGBT that helps reduce the power consumption and radiated emissions of home appliances : GT30J110SRA