Toshiba Launches 3300V SiC MOSFET Module with High Surge Current Capability that Helps Improve Reliability of Industrial Equipment
September 24, 2026
Toshiba Electronic Devices & Storage Corporation
KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation ("Toshiba") has expanded its lineup with the launch of "IX800FXF2YMS4," a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The new module features Toshiba’s third-generation silicon carbide (SiC) MOSFET chips, a drain-source voltage rating of 3300V and a drain current (DC) rating of 800A. Its specifications state an I2t limit value in the diode section, an indicator of surge current capability.
Manufacturers of industrial equipment, including railway traction inverters and converters, renewable energy power generation systems, and industrial motor control equipment, must constantly meet increasing demands for higher efficiency, smaller size and improved reliability. In these systems, large surge currents that can flow through power semiconductor modules in abnormal conditions must be countered by a sufficient surge current capability.
IX800FXF2YMS4 has an optimized SiC chip design and delivers an I2t characteristic of 300kA2s[1], an indicator of the diode section’s surge current capability under abnormal conditions.
The module has a drain-source on-voltage (sense) (VDS(on)sense) of 1.4V (typ.)[2], which helps reduce conduction losses. Its turn-on switching loss (Eon) of 185mJ (typ.)[3] and turn-off switching loss (Eoff) of 175mJ (typ.)[3] help reduce switching losses. These characteristics contribute to improved equipment reliability and efficiency, and to smaller cooling systems.
The new product adopts the iXPLV™ package[4], which offers excellent mounting compatibility. It uses silver sintering bonding technology to improve the heat resistance and reliability of bonded sections with SiC chips, achieving the 175°C channel temperature rating required for industrial equipment.
This new addition to Toshiba’s lineup brings the number of SiC MOSFET modules in the iXPLV™ package to four, broadening the range of available product options.
Toshiba will continue to expand its lineup of SiC MOSFET modules for industrial equipment and provide a wider range of product options that meet diverse equipment specifications and applications. The company will also contribute to more reliable, efficient and compact industrial equipment.
Notes:
[1] Test conditions: Tch(initial)=175°C, VGS=-6V, half sine-wave 10ms 1pulse, F.R.=1%
[2] Test conditions: ID=800A, VGS=+20V, Tch=25°C
[3] Test conditions: VDD=1800V, ID=800A, VGS=+20V/-6V, Cgs=100nF, RG(on)=1.2Ω, RG(off)=1.2Ω, Tch=175°C, LS≃70nH
[4] iXPLV™: Abbreviation for intelligent fleXible Package Low Voltage
Applications
Industrial equipment
- Railway traction inverters and converters
- Renewable energy power generation systems
- Power conversion systems (solid-state transformers (SST)[5]; uninterruptible power supplies (UPS); energy storage systems (ESS), etc.)
- Industrial motor control equipment, etc.
Note:
[5] SST: A next-generation transformer that utilizes power semiconductors to achieve compact size, highly efficient voltage conversion, and advanced power control.
Features
- Specifies I2t limit value (Diode) rating: I2t=300kA2s
- Low drain-source on-voltage (sense): VDS(on)sense=1.4V (typ.)
- Low switching loss: Eon=185mJ (typ.), Eoff=175mJ (typ.)
- Channel temperature rating: Tch=175°C
- Adopts the iXPLVTM package.
Main Specifications
(Tc=25°C, unless otherwise specified)
| Part number | IX800FXF2YMS4 | |||
|---|---|---|---|---|
| Package | Name | iXPLV™ | ||
| Size (mm) | Typ. | 144×99.5×40 | ||
| Absolute maximum ratings | Drain-source voltage VDSS (V) | 3300 | ||
| Gate-source voltage VGSS (V) | +25/-10 | |||
| Drain current (DC) ID (A) | 800 | |||
| Drain current (pulsed) IDP (A) | 1600 | |||
| Channel temperature Tch (°C) | 175 | |||
| Isolation voltage Visol (Vrms) | AC, 60s | 6000 | ||
| I2t limit value (Diode) I2t (kA2s) | Tch(initial)=175°C, VGS=-6V, half sine-wave 10ms 1pulse, F.R.=1% |
300 | ||
| Electrical characteristics | Drain-source on-voltage (sense) VDS(on)sense (V) |
ID=800A, VGS=+20V, Tch=25°C |
Typ. | 1.4 |
| Source-drain on-voltage (sense) VSD(on)sense (V) |
IS=800A, VGS=+20V, Tch=25°C |
Typ. | 1.4 | |
| Source-drain off-voltage (sense) VSD(off)sense (V) |
IS=800A, VGS=-6V, Tch=25°C |
Typ. | 2.2 | |
| Stray inductance LsPN (nH) | P terminal-N terminal | Typ. | 12 | |
| Turn-on switching loss Eon (mJ) |
VDD=1800V, ID=800A, VGS=+20V/-6V, Cgs=100nF, RG(on)=1.2Ω, RG(off)=1.2Ω, Tch=175°C, LS≃70nH | Typ. | 185 | |
| Turn-off switching loss Eoff (mJ) |
Typ. | 175 | ||
Application Circuit Example
Note: The application circuit example shown in this document is for reference only. Designs for mass production must be thoroughly evaluated. Providing this application circuit example does not grant any license for industrial property rights.
Follow the link below for more on the new product.
IX800FXF2YMS4
Follow the link below for more on Toshiba’s SiC power device lineup.
SiC Power Devices
Customer inquiries:
Power & Small Signal Device Sales & Marketing Dept.
Tel: +81-44-548-2216
* iXPLV™ is a trademark of Toshiba Electronic Devices & Storage Corporation.
* Other company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.