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Low capacitance TVS diodes for automotive applications offering fine protection performance while keeping signal quality at several Gbps : DF2S5M4FS, DF2S6M4FS

Product News 2019-09

The package photograph of low capacitance TVS diodes for automotive applications offering fine protection performance while keeping signal quality at several Gbps : DF2S5M4FS, DF2S6M4FS.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched two unidirectional, low capacitance TVS diodes, "DF2S5M4FS" (VRWM max=3.6 V) and "DF2S6M4FS" (VRWM max=5.5 V), which protect I/O ports of SerDes ICs[1] used for video signal lines of such as automotive ADAS[2] camera modules and ADAS[2] ECUs from noise and surges.

For automobiles, requirements for their safety functions are becoming stricter than ever together with the move toward automated driving. Improvement of camera’s performances (high image quality and resolutions) increase the amount of information, and the transfer of information to driving systems is shifting toward real-time communications. Therefore, high-speed LVDS[3] communications are increasingly used.
The new products DF2S5M4FS and DF2S6M4FS feature a maximum diode capacitance of 0.55 pF to handle high speed communications at several Gbps and it also keeps signal quality (eye patterns). In addition, by using our latest original process EAP-IV[4], they feature a typical clamp voltage of 7.5 V[5] and an electrostatic discharge voltage of ±30 kV[6] to prevent device breakdowns and malfunctioning to help increase system reliability.
They use the industry standard SOD-923 (1.0×0.6 mm typ.) small size surface mounting package, which is suitable for downsizing of equipment. In addition, by conforming to AEC-Q101, they can be widely used for various automotive applications such as IVI[7] and electronic mirrors.

Notes :
[1] SerDes IC (Serializer/Deserializer IC : a picture signal IC to convert parallel data to serial data and vice-versa)
[2] ADAS (Advanced Driver Assistance System)
[3] LVDS (Low Voltage Differential Signaling, Transmission speed : Several Gbps)
[4] EAP-IV : Fourth generation ESD Array Process
[5] DF2S6M4FS
[6] According to ISO10605
[7] IVI (In-Vehicle Infotainment)

Features

  • AEC-Q101 qualified
  • Signal quality is kept by low capacitance at the time of the high-speed communication of several Gbps :
      Ct=0.55 pF (max)
  • Low clamp voltage : VC=7.5 V (typ.) (DF2S6M4FS)

Applications

  • Automotive ADAS[2] camera and IVI[7], etc.

Product Specifications

(@Ta=25 °C)

Part number DF2S5M4FS DF2S6M4FS
Configuration Unidirectional
Package SOD-923
Absolute
maximum
ratings
Electrostatic discharge voltage
VESD  (kV)
@Contact[8] ±20 ±20
@Air[8] ±20 ±20
@Contact[6] ±30 ±30
@Air[6] ±30 ±30
Peak pulse power  PPK  (W) @tp=8/20 μs 30 30
Peak pulse current  IPP  (A) 2 2
Recommended
operation
conditions
Working peak reverse voltage  VRWM max  (V) 3.6 5.5
Electrical
characteristics
Reverse breakdown voltage  VBR min  (V) @IR=1 mA 3.7 5.6
Reverse breakdown voltage  VBR max  (V) 5.5 7.9
Reverse current  IR max  (μA) @VRWM max 0.1 0.1
Clamp voltage  VC typ.[9]  (V) @IPP=1 A 6.8 7.5
Dynamic resistance  RDYN typ.[10]  (Ω)
0.35 0.35
Total capacitance  Ct max  (pF) @VR=0 V, f=1 MHz 0.55 0.55

Notes :
[8] According to IEC61000-4-2
[9] According to IEC61000-4-5
[10] TLP parameter: Z0=50 Ω, tp=100 ns, tr=300 ps, averaging window t1=30 ns to t2=60 ns,
       extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1=8 A and IPP2=16 A.

Equivalent Circuit

The illustration of equivalent circuit of low capacitance TVS diodes for automotive applications offering fine protection performance while keeping signal quality at several Gbps : DF2S5M4FS, DF2S6M4FS.

Application Circuit Example

The illustration of application circuit example of low capacitance TVS diodes for automotive applications offering fine protection performance while keeping signal quality at several Gbps : DF2S5M4FS, DF2S6M4FS.

The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

Characteristic Curves (Reference)

The illustration of characteristic curves of low capacitance TVS diodes for automotive applications offering fine protection performance while keeping signal quality at several Gbps : DF2S5M4FS, DF2S6M4FS.

Notes :
[12] As of May 2019, values measured by Toshiba

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.