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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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100 V N-channel power MOSFET products for industrial equipment, featuring industry’s lowest level On-resistance: TPH3R70APL, TPN1200APL

Product News 2017-12

The package photograph of 100 V N-channel power MOSFET products for industrial equipment, featuring industry’s lowest level On-resistance: TPH3R70APL, TPN1200APL.

“TPH3R70APL” and “TPN1200APL” are new low voltage N-channel power MOSFET products (U-MOSIX-H series); these 100 V products suitable for power supplies for industrial equipment.
Fabricated with the company’s latest low voltage U-MOSIX-H trench process, which optimizes the device structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest level On-resistance[1]. In addition, compared with the current devices using the U-MOSVIII-H process, the new devices have lower On-resistance × output charge and On-resistance × gate switch charge key figures of merit for MOSFETs for switching applications[2].
Toshiba Electronic Devices & Storage Corporation will continue to expand its MOSFET portfolio with market trends in order to help improve the power supply efficiency.

Notes:
[1] As of November, 2017 for MOSFETs with equivalent ratings. Toshiba Electronic Devices & Storage Corporation survey.
[2] For TPH3R70APL, its On-resistance × output charge has been reduced by 10 %, and On-resistance × gate switch charge has been reduced by 10 %, compared with TPH4R10ANL (U-MOSVIII-H).

Features

  • Industry’s lowest level On-resistance[1]
       RDS(ON)=3.7 mΩ (max) @VGS=10 V (TPH3R70APL)
       RDS(ON)=11.5 mΩ (max) @VGS=10 V (TPN1200APL)
  • Low output charge and low gate switch charge
  • Allows 4.5V logic level drive

Applications

  • Power supplies for industrial equipment
  • Motor control equipment

Product Specifications

(Unless otherwise specified, @Ta=25°C)

Part
number
Absolute
maximum ratings
Drain-source
On-resistance
RDS(ON) max
(mΩ)
Total
gate
charge
Qg
typ.
(nC)
Gate
switch
charge
QSW
typ.
(nC)
Output
charge
Qoss
typ.
(nC)
Input
capacitance
Ciss
typ.
(pF)
Package
Drain-
source
voltage
VDSS
(V)
Drain
current
(DC)
ID
@TC=25°C
(A)
@VGS
=10 V
@VGS
=4.5 V
100 90 3.7 6.2 67 21 74 4850 SOP Advance
40 11.5 20 24 7.5 24 1425 TSON Advance

Internal Circuit

The illustration of internal circuit of 100 V N-channel power MOSFET products for industrial equipment, featuring industry’s lowest level On-resistance: TPH3R70APL, TPN1200APL.

Application Circuit Example

The illustration of application circuit example of 100 V N-channel power MOSFET products for industrial equipment, featuring industry’s lowest level On-resistance: TPH3R70APL, TPN1200APL.
The illustration of application circuit example of 100 V N-channel power MOSFET products for industrial equipment, featuring industry’s lowest level On-resistance: TPH3R70APL, TPN1200APL.

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.