Product News 2018-04
Document Download (PDF:580KB)
“TPH1R306P1” is a new product in our 60 V N-channel power MOSFET U-MOSIX-H series suitable for power supplies.
The new product uses the SOP Advance surface mount package, and has expanded the lineup. It is a low spike product, using the latest generation process U-MOSIX-H with a low voltage trench structure. The new product is able to maintain low spike voltage which is generated between the drain and the source at the switching operation, making it suitable for synchronous rectification in a secondary side of switching power supplies that require low EMI.
Both low spike products and highly efficient products have been lined up in the U-MOSIX-H series, so users can choose products that are suitable for their applications.
Notes:
[1] As of March 2018, from a survey by Toshiba Electronic Devices & Storage Corporation.
(Unless otherwise specified, @Ta=25 °C)
Part number |
Absolute maximum ratings |
Drain-source On-resistance RDS(ON) max (mΩ) |
Total gate charge Qg typ. (nC) |
Output charge Qoss typ. (nC) |
Input capacitance Ciss typ. (pF) |
Gate resistance rg typ. (Ω) |
Package | ||
---|---|---|---|---|---|---|---|---|---|
Drain- source voltage VDSS (V) |
Drain current (DC) ID @TC=25 °C (A) |
@VGS =10 V |
@VGS =4.5 V |
||||||
60 | 100 | 1.28 | 2.3 | 91 | 77.5 | 6250 | 2.2 | SOP Advance |
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.
Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.