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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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A low spike product in our 60 V N-channel power MOSFET U-MOSIX-H series that helps reducing EMI of power supplies: TPH1R306P1

Product News 2018-04

The package photograph of a low spike product in our 60 V N-channel power MOSFET U-MOSIX-H series that helps reducing EMI of power supplies: TPH1R306P1.

“TPH1R306P1” is a new product in our 60 V N-channel power MOSFET U-MOSIX-H series suitable for power supplies.
The new product uses the SOP Advance surface mount package, and has expanded the lineup. It is a low spike product, using the latest generation process U-MOSIX-H with a low voltage trench structure. The new product is able to maintain low spike voltage which is generated between the drain and the source at the switching operation, making it suitable for synchronous rectification in a secondary side of switching power supplies that require low EMI.
Both low spike products and highly efficient products have been lined up in the U-MOSIX-H series, so users can choose products that are suitable for their applications.

Features

  • Industry’s lowest level On-resistance[1]
      RDS(ON)=1.28 mΩ (max) @VGS=10 V
  • Low spike
  • Allows 4.5 V logic level drive

Notes:
[1] As of March 2018, from a survey by Toshiba Electronic Devices & Storage Corporation.

Applications

  • Various types of power supplies
      (efficient DC-DC converters, efficient AC-DC converters, switching power supplies, etc.)
  • Motor control equipment
      (motor drives, etc.)

Product Specifications

(Unless otherwise specified, @Ta=25 °C)

Part
number
Absolute
maximum ratings
Drain-source
On-resistance
RDS(ON)  max
(mΩ)
Total
gate
charge
Qg
typ.
(nC)
Output
charge
Qoss
typ.
(nC)
Input
capacitance
Ciss
typ.
(pF)
Gate
resistance
rg
typ.
(Ω)
Package
Drain-
source
voltage
VDSS
(V)
Drain
current
(DC)
ID
@TC=25 °C
(A)
@VGS
=10 V
@VGS
=4.5 V
60 100 1.28 2.3 91 77.5 6250 2.2 SOP Advance

Internal Circuit

The illustration of internal circuit of a low spike product in our 60 V N-channel power MOSFET U-MOSIX-H series that helps reducing EMI of power supplies: TPH1R306P1.

Application Circuit Example

The illustration of application circuit example of a low spike product in our 60 V N-channel power MOSFET U-MOSIX-H series that helps reducing EMI of power supplies: TPH1R306P1.
The illustration of application circuit example of a low spike product in our 60 V N-channel power MOSFET U-MOSIX-H series that helps reducing EMI of power supplies: TPH1R306P1.

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.