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Lineup expansion of 600 V planar MOSFET π-MOSIX series products that allow greater design flexibility by reducing EMI noise: TK1K0A60F, TK1K7A60F, TK2K2A60F, TK4K1A60F

Product News 2018-09

The package photograph of lineup expansion of 600 V planar MOSFET π-MOSIX series products that allow greater design flexibility by reducing EMI noise: TK1K0A60F, TK1K7A60F, TK2K2A60F, TK4K1A60F.

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched its latest[1] 600 V N-channel planar MOSFET π-MOSIX series products “TK1K0A60F,” “TK1K7A60F,” ”TK2K2A60F,” and ”TK4K1A60F” to expand its lineup.
Compared with the conventional π-MOSVII series products, the new products have reduced their EMI noise peak while maintaining their efficiency by optimizing the chip design, have contributed to greater design flexibility and have saved design work. TK750A60F (π-MOSIX), an existing product in the series, has reduced its EMI noise peak value by 5 dB[2] compared to the conventional product TK10A60D (π-MOSVII). In addition, the π-MOSIX series has a rated avalanche current equivalent to the rated DC current, making it a simple replacement for a conventional MOSFET.
Going forward, the product lineup will be expanded with this series.

Notes:
[1] As of September 2018
[2] 65 W laptop PC adapters in the 200 MHz region

Features

  • Applies the latest[1] planar MOSFET process (π-MOSIX series)
  • Keeps high efficiency and low noise
  • Secured avalanche current ratings equivalent to drain current (DC) ratings.

Applications

  • Small to medium switching power supplies (AC adapters for laptop PCs, game console chargers, etc.)
  • Lighting power supplies

Product Specifications

(@Ta=25 °C)

Part
number
Package Absolute
maximum ratings
Drain-source
On-resistance
RDS(ON)
max
@VGS=10 V
(Ω)
Total
gate
charge
Qg
typ.
(nC)
Input
capacitance
Ciss
typ.
(pF)
Conventional series
(π-MOSVII series)
Part number
Drain-
source
voltage
VDSS
(V)
Drain
current
(DC)
ID
(A)
TK1K0A60F TO-220SIS 600 7.5 1 24 890 TK8A60DA
TK1K7A60F 4 1.7 16 560 TK4A60D
TK2K2A60F 3.5 2.2 13 450 TK4A60DA
TK4K1A60F 2 4.1 8 270 2SK3767[3]
(RDS(ON)=4.5 Ω)

Notes:
[3] π-MOSVI

Internal Circuit

The illustration of internal circuit of lineup expansion of 600 V planar MOSFET π-MOSIX series products that allow greater design flexibility by reducing EMI noise: TK1K0A60F, TK1K7A60F, TK2K2A60F, TK4K1A60F.

Application Circuit Example

The illustration of application circuit example of lineup expansion of 600 V planar MOSFET π-MOSIX series products that allow greater design flexibility by reducing EMI noise: TK1K0A60F, TK1K7A60F, TK2K2A60F, TK4K1A60F.

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.

Comparison[4] between the latest[1] series and the conventional series (Reference data)

The illustration of comparison between the latest series and the conventional series of lineup expansion of 600 V planar MOSFET π-MOSIX series products that allow greater design flexibility by reducing EMI noise: TK1K0A60F, TK1K7A60F, TK2K2A60F, TK4K1A60F.

Notes:
[4] Values measured by Toshiba (In case of TK750A60F in the latest series with TK10A60D in the conventional series)

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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