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40 V/60 V N-channel power MOSFETs with small and surface mounting that contributes to low power consumption of automotive equipment : XPN3R804NC, XPN7R104NC, XPN6R706NC, XPN12006NC

Product News 2020-05

The package photograph of lineup expansion of the new generation super junction N-ch power MOSFET “DTMOSVI series” contributing to higher efficiency of power supplies: TK110N65Z, TK110Z65Z, TK110A65Z, TK125V65Z, TK155A65Z, TK170V65Z, TK190A65Z, TK210V65Z.

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched four new N-channel power MOSFETs of small surface-mount TSON Advance(WF) packages for automotive equipment. They are new on our lineup as low On-resistance N-channel MOSFET packed in TSON Advance(WF): 40 V “XPN3R804NC” and “XPN7R104NC,” 60 V “XPN6R706NC” and “XPN12006NC.”

The new products use TSON Advance(WF) packages with a wettable flank terminal structure, which facilitates automated visual inspection of board mounting conditions. In addition, the low On-resistance products using Toshiba’s "U-MOSVIII-H" process contribute to power saving of equipment. This enables us to replace Toshiba’s conventional products of the same size package. Performance improvements can also contribute to the downsizing of ECUs by replacing similar 5×6 mm sized products.

Features

  • AEC-Q101 qualified
  • Low On-resistance :
        RDS(ON)=3.8 mΩ (max) @VGS=10 V (XPN3R804NC)
        RDS(ON)=7.1 mΩ (max) @VGS=10 V (XPN7R104NC)
        RDS(ON)=6.7 mΩ (max) @VGS=10 V (XPN6R706NC)
        RDS(ON)=12.0 mΩ (max) @VGS=10 V (XPN12006NC)
  • Small and surface mounting TSON Advance(WF) package with wettable flank terminal structure :
    3.3×3.6 mm (typ.)

Applications

Automotive equipment

  • Switching regulators
  • DC-DC converters
  • Motor drivers

Product Specifications

(Unless otherwise specified, @Ta=25 °C)

Part number XPN3R804NC XPN7R104NC XPN6R706NC XPN12006NC
Polarity N-channel
Package Name TSON Advance(WF)
Size typ. (mm) 3.3×3.6
Absolute
maximum
ratings
Drain-source voltage VDSS (V) 40 40 60 60
Drain current (DC) ID (A) 40 20 40 20
Drain current (pulsed) IDP (A) 80 60 80 60
Channel temperature Tch (°C) 175
Thermal
characteristics
Channel-to-case
thermal impedance
Zth(ch-c) max (°C/W)
@Tc=
25 °C
1.5 2.3 1.5 2.3
Electrical
characteristics
Drain-source On-resistance
RDS(ON) max (mΩ)
@VGS=
4.5 V
7.8 14.2 13.3 23.7
@VGS=
10 V
3.8 7.1 6.7 12.0
Series U-MOSVIII-H

Internal Circuits

The illustration of internal circuits of 40 V/60 V N-channel power MOSFETs with small and surface mounting that contributes to low power consumption of automotive equipment : XPN3R804NC, XPN7R104NC, XPN6R706NC, XPN12006NC.

Application Circuit Examples

The illustration of application circuit example of 40 V/60 V N-channel power MOSFETs with small and surface mounting that contributes to low power consumption of automotive equipment : XPN3R804NC, XPN7R104NC, XPN6R706NC, XPN12006NC.
The illustration of application circuit example of 40 V/60 V N-channel power MOSFETs with small and surface mounting that contributes to low power consumption of automotive equipment : XPN3R804NC, XPN7R104NC, XPN6R706NC, XPN12006NC.

Note: The application circuits shown in this document are provided for reference purposes only.
         Thorough evaluation is required, especially at the mass production design stage.
         Providing these application circuit examples does not grant any license for industrial property rights.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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