Toshiba Electronic Devices & Storage Corporation Releases 100V N-Channel Power MOSFETs for Industrial Applications with the Industry’s Lowest-in-Class On-resistance

December 18, 2017
Toshiba Electronic Devices & Storage Corporation

Expanding the line-up of the low-voltage U-MOS IX-H power MOSFET series

U-MOS IX-H N-channel power MOSFET series

TOKYO— Toshiba Electronic Devices & Storage Corporation has today started to ship “TPH3R70APL” and “TPN1200APL,” new 100V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are suitable for power supply applications in industrial equipment.

Fabricated with the company’s latest low-voltage U-MOS IX-H trench process, which optimizes the element structure, the TPH3R70APL and TPN1200APL deliver the industry’s lowest-in-class On-resistance[1]. In addition, compared with the current devices using the U-MOS VIII-H process, the new devices have lower “RDS(ON) × Qoss”, On-resistance times output charge, and “RDS(ON) × QSW”, On-resistance times gate switch charge, key figures of merit for MOSFETs for switching applications[2].

Toshiba Electronic Devices & Storage Corporation will continue to expand its MOSFET portfolio in line with market trends in order to help improve power supply efficiency.

Applications

  • Power supplies for industrial equipment
  • Motor control equipment

Features

  • Industry’s lowest-in-class On-resistance[1]
      RDS(ON) = 3.7mΩ (max) @ VGS = 10V (TPH3R70APL)
      RDS(ON) = 11.5mΩ (max) @ VGS = 10V (TPN1200APL)
  • Low output charge and low gate switch charge
  • Allows 4.5V logic level drive

Main Specifications

(Unless otherwise specified, Ta=25℃)

Part
number
Absolute
maximum ratings
Drain-source
On-resistance
RDS(ON)max
(mΩ)
Total
gate
charge
Qgtyp.
(nC)
Gate switch charge
Qsw typ.
(nC)
Output
charge
Qoss typ.
(nC)
Input
capacitance
Cisstyp.
(pF)
Package
Drain-
source
voltage VDSS(V)
Drain
current (DC)
ID
@Tc = 25℃
(A)
@VGS=10V @VGS=4.5V

100

90 3.7 6.2 67 21 74 4850 SOP Advance
40 11.5 20 24 7.5 24 1425

 

TSON Advance

 

Notes:

[1] As of December 18, 2017 for MOSFETs with equivalent ratings. Toshiba Electronic Devices & Storage Corporation survey.

[2] TPH3R70APL has 10% lower RDS(ON) × Qoss than the U-MOSVIII-H series TPH4R10ANL.

TPH3R70APL has 10% lower RDS(ON) × QSW than the U-MOSVIII-H series TPH4R10ANL.

Follow the link below for more on MOSFET line-up.

Customer Inquiries:

Power Device Sales & Marketing Department
Tel: +81-3-3457-3933

*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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