Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.

 March 23, 2018
Toshiba Electronic Devices & Storage Corporation

SSM6N813R

TOKYO--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released a dual MOSFET “SSM6N813R” with high ESD protection positioned for use in automotive applications, including as a driver IC for headlight LEDs, which require a high withstand voltage and a small footprint. Mass production shipments begin in April.

A maximum drain-source voltage (VDSS) of 100V ensures that SSM6N813R is suitable for headlight applications requiring multiple LEDs—a capability supported by high ESD immunity. Fabricated using the latest process and housed in a TSOP6F package, SSM6N813R has an allowable power dissipation of 1.5W and low on-resistance. In addition, the footprint of the TSOP6F package is 70% smaller than that of an SOP8 package.

Applications

  • Automotive headlight LED driver

Features

  • Small package
  • High ESD protection
  • Low RDS(ON)

Main Specifications

(@Ta=25℃)

Items
(Ta=25℃)

SSM6N813R
Absolute maximum ratings Drain-source voltage
VDSS (V)
100
Gate-source voltage
VGSS (V)
±20
Drain current
ID (A)
3.5
Electrical Characteristics Drain-source on-resistance
RDS(ON) max (mΩ)
VGS=10V 112
VGS=4.5V  154
Input capacitance
Ciss typ. (pF)
242
Package 2.9mm×2.8mm; t=0.8mm
Marking (Top view) / Equivalent Circuit

Customer Inquiries:

Small Signal Device Sales & Marketing Department
Tel: +81-3-3457-3411

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

A new window will open