March 23, 2018
Toshiba Electronic Devices & Storage Corporation
TOKYO--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has released a dual MOSFET “SSM6N813R” with high ESD protection positioned for use in automotive applications, including as a driver IC for headlight LEDs, which require a high withstand voltage and a small footprint. Mass production shipments begin in April.
A maximum drain-source voltage (VDSS) of 100V ensures that SSM6N813R is suitable for headlight applications requiring multiple LEDs—a capability supported by high ESD immunity. Fabricated using the latest process and housed in a TSOP6F package, SSM6N813R has an allowable power dissipation of 1.5W and low on-resistance. In addition, the footprint of the TSOP6F package is 70% smaller than that of an SOP8 package.
|Absolute maximum ratings||Drain-source voltage
|Electrical Characteristics||Drain-source on-resistance
RDS(ON) max (mΩ)
Ciss typ. (pF)
Small Signal Device Sales & Marketing Department
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