July 31, 2018
Toshiba Electronic Devices & Storage Corporation
- New packaging provides double-sided cooling for improved heat dissipation
TOKYO—In August, Toshiba Electronic Devices & Storage Corporation (“Toshiba”) will start mass production and shipments of “TPWR7904PB” and “TPW1R104PB”, 40V N-channel power MOSFETs for automotive applications. They are housed in the DSOP Advance(WF) packages that deliver double-sided cooling, low resistance, and small size.
The new products secure high heat dissipation and low On-resistance characteristics by mounting a U-MOS IX-H series chip, a MOSFET with the latest trench structure, into a DSOP Advance(WF) package. Heat generated by conduction loss is effectively dissipated, improving the flexibility of thermal design.
The U-MOS IX-H series also delivers lower switching noise than Toshiba’s previous U-MOS IV series, contributing to lower EMI. The DSOP Advance(WF) package has a wettable flank terminal structure.
|Part number||Absolute maximum ratings||Drain-source On-resistance
|Built-in Zener Diode between Gate-Source
|Drain- source voltage VDSS
|Drain current (DC) ID
|40||150||1.3||0.79||No||U-MOS IX-H||DSOP Advance(WF)L|
 EMI (Electromagnetic interference)
 Wettable flank terminal structure: A terminal structure that allows AOI (Automated Optical Inspection) of installation on boards.
 Be aware that the top plate has the same electric potential as the sources; however, not intended for an electrode.
Power Device Sales & Marketing Department
Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.