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Toshiba Introduces Cutting-edge Generation SOI Process for RF Switches and Low-Noise Amplifier ICs for 5G Smartphones

February 27, 2020

Toshiba Electronic Devices & Storage Corporation

TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) today announced the development of “TaRF11,” the latest generation of Toshiba’s advanced RF SOI[1] process (TarfSOI™) optimized for RF switches and low noise amplifiers (LNA) in mobile devices such as 5G smartphones.

In recent years, the performance of smartphones and other mobile devices has improved, and they have migrated to higher wireless band frequencies. Generally, the higher the frequency, the greater the signal loss between the antenna and the receiving circuit, driving a need for LNA with enhanced characteristics that improve received signal quality by compensating for signal loss.

Toshiba’s newly developed TaRF11 process improves on the RF characteristics of TaRF10, the current generation SOI process technology. MOSFETs for LNA fabricated with TaRF11 process achieve a minimum noise figure (NF[2]) of 0.48dB @8GHz, a 0.3dB[3] improvement over TaRF10. Like the TaRF10, the TaRF11 process allows the LNA, RF switch, and control circuit to be fabricated on a single chip.

Toshiba has developed RF ICs, utilizing the fab of its subsidiary, Japan Semiconductor Corporation to apply the latest SOI-CMOS technology. By handling all aspects of the production flow, from RF process technology development to design and manufacturing, Toshiba secures a rapid products launch.

Toshiba will continue to advance its cutting-edge TarfSOI™ process technology, toward securing further performance improvements and to provide RF-switch and LNA ICs for Wi-Fi equipment; for 5G smartphones, which are scheduled to expand from the 5GHz to the 7GHz band; and for Ultra Wide Band applications that use the 7GHz to 10GHz frequencies. 

Applications

  • Smartphones
  • Wireless equipment, such as Wi-Fi and UWB, etc.

Features

  •  Outstanding noise figure :
      NF=0.48dB (min) @8GHz (Improved by about 0.3dB compared to TaRF10)
  •  An LNA, RF switch and control circuit can be manufactured on a single chip.
  •  Integrated development of the latest semiconductor processes and product development enables the early launch of high-frequency switch products

Main Specifications

Frequency

(GHz)

Minimum NF of MOSFET for LNA

(dB)

TaRF11

TaRF10

8.0

0.48

0.79

6.0

0.44

0.69

4.0

0.40

0.50

Notes:

[1] TarfSOI (Toshiba advanced RF SOI): TarfSOI is SOI-CMOS (Silicon On Insulator-Complementary Metal Oxide Semiconductor), a front-end process technology developed by Toshiba for RF switch ICs and Low-Noise Amplifier ICs.

[2] NF (Noise Figure): Signal-to-noise ratio at the input terminal and output terminal of an amplifier circuit. Lower values indicate less noise and superior characteristics.

[3] Improvement of approximately 0.1dB at 4GHz and approximately 0.25dB at 6GHz

* Wi-Fi is a registered trademark of Wi-Fi Alliance.
* TarfSOI™ is a trademark of Toshiba Electronic Devices & Storage Corporation.
* Other company names, product names, and service names may be trademarks of their respective companies.

Customer Inquiries:

Small Signal Device Sales & Marketing Department

Tel: +81-3-3457-3411

Contact

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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