March 10, 2021
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation (“Toshiba”) will expand production capacity for power devices with the construction of a 300-millimeter wafer fabrication facility at Kaga Toshiba Electronics Corporation in Japan. Mass production on the new line will start in the first half of fiscal year 2023.
Power devices are essential components for managing and reducing power consumption by vehicles and industrial and other electrical equipment. Growth in the e-vehicle, factory automation and renewable energy sectors continues to drive demand growth for power devices.
Toshiba has until now met demand by expanding production capacity on a 200mm wafer facility at Kaga Toshiba Electronics Corporation. The company will construct the new 300mm facility in a building on the same site that currently houses a 200mm line. The new 300mm line will be used to manufacture low-voltage metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs).
Toshiba will make decisions on further investments to increase output in line with market conditions. It will also continue to expand production of discrete semiconductors, including power devices, at Japan Semiconductor Corporation, a manufacturing subsidiary that mainly produces system LSIs.
Toshiba will strengthen its power device business by expanding production capacity and continue to contribute to advances in energy-saving.
Location: 1-1, Iwauchi-cho, Nomi-shi, Ishikawa Prefecture, Japan
President and Representative Director: Hideo Tokunaga
Employees: Approx. 980 (as of January 1, 2021)
Main Products: Discrete semiconductors (power devices, small-signal devices and optoelectronics)
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