Notice of Termination of MOU on Collaboration Regarding SiC Power Semiconductor Wafers
October 3, 2025
Toshiba Electronic Devices & Storage Corporation
Toshiba Electronic Devices & Storage Corporation hereby announces that the memorandum of understanding concluded with SICC Co., Ltd. in August 2025, on collaboration in silicon carbide (SiC) power semiconductor wafers, was terminated in September 2025 following further discussions between the two companies.
For reference: Toshiba and SICC Sign MOU on Collaboration in SiC Power Semiconductor Wafers
https://toshiba.semicon-storage.com/ap-en/company/news/news-topics/2025/08/corporate-20250822-1.html
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