Toshiba launches two new 80V N-channel power MOSFETs

Toshiba Electronics Europe GmbH has launched two new 80V N-channel power MOSFETs based upon their latest generation U-MOSX-H process. Both devices are suited to a wide range of power applications where low-loss operation is important, including highly efficient AC-DC and DC-DC conversion in data centres and communication base stations as well as a broad range of motor drive equipment.

Both the TPH2R408QM and TPN19008QM are 80V U-MOSX-H products that exhibit a reduction of around 40% in drain-source on-resistance (R_DS(ON)) compared to corresponding 80V products in earlier processes such as U-MOSVIII-H. As a result, the TPN19008QM has an R_DS(ON) value of 19mΩ (max.) while the TPH2R408QM value is just 2.43mΩ.

Optimising the device structure has improved the trade-off between R_DS(ON) and gate charge characteristics by up to 15% and the trade-off between R_DS(ON) and output charge by 31%. Combining this with the improvements in R_DS(ON) means that the new devices feature the lowest power dissipation in the industry.

Both devices are housed in surface mount packages and rated for a drain-source voltage (V_DSS) of 80V. They can operate at channel temperatures (T_ch) as high as 175ºC. The TPN19008QM is rated for a drain current (I_D) of 34A and is housed in a 3.3mm x 3.3mm TSON advance package while the TPH2R408QM is rated for an I_D of 120A and housed in a 5.0mm x 6.0mm SOP advance package.

Progressive shipping of the new devices starts today.