An Insulated Gate Bipolar Transistor, IGBT, and an Injection Enhanced Gate Transistor, IEGT, are devices that switch power on and off between a collector and emitter by controlling the voltage between the gate and emitter in the same way as MOSFET.
Toshiba IGBT and IEGT can be used in a wide range of applications, from home appliances to infrastructure equipment.
Toshiba to Expand Power Semiconductor Production Capacity with 300-millimeter Wafer Fabrication Facility
Toshiba Electronic Devices & Storage Corporation Announces Major Investment in Power Devices Business
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