Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

New 150V N-channel power MOSFET improves power supply efficiency

Toshiba’s U-MOSX-H process reduces losses and voltage spikes in power applications

31st March 2022

New 150V N-channel power MOSFET improves power supply efficiency

Toshiba Electronics Europe GmbH (“Toshiba”) has launched a new 150V N-channel power MOSFET that uses the latest generation U-MOSX-H process to significantly reduce losses.  Additionally, voltage spikes between the drain and source during switching have been reduced, thereby improving EMI performance within switching power supplies.

The new device is suitable for a wide range of applications including switching power supplies within industrial equipment, including applications in communication base stations and data centers.

The new TPH9R00CQH MOSFET has a very low drain-source on-resistance (RDS(ON)) of just 9.0mΩ (max. @ VGS=10V). This represents a reduction of approximately 42% when compared to the existing 150V product (TPH1500CNH) that is based upon the current generation U-MOSVIII-H process. Key figures-of-merit (FoM) including RDS(ON) x QSW and RDS(ON) x QOSS have reduced by approximately 20% and 28% respectively, thereby further enhancing performance.

Through careful optimization of the device structure charge characteristics have been improved. With a total gate charge (Qg) of just 44nC and a gate switch charge (QSW) of 11.7nC the device offers excellent performance, especially in high-speed applications.

The new TPH9R00CQH offers two surface mount (SMD) package options – SOP Advance (5.0mm x 6.0mm) and SOP Advance(N) (4.9mm x 6.1mm) which can be selected to meet the needs of any application.

Shipment of the new device starts today.

Toshiba will continue to expand its lineup of power MOSFETs that improve the efficiency of power supplies through reduced losses, to support reduction of power consumption within all types of equipment.

A new window will open