Toshiba launches 1.4mΩ 80V N-channel power MOSFET for high efficiency industrial power equipment

The U-MOS11-H generation supports low loss performance and high drain current capability in a compact 4.9 x 6.1mm package

30th June 2026

The U-MOS11-H generation supports low loss performance and high drain current capability in a compact 4.9 x 6.1mm package

Toshiba Electronics Europe GmbH (“Toshiba”) has introduced the TPM1R408RH, an 80V N-channel power MOSFET based on the company’s latest U-MOS11-H process technology. Designed for high-efficiency industrial switched-mode power supplies for data centre and communications base station equipment, the new device combines ultra-low on-resistance (RDS(ON)) with fast switching performance to help designers improve system efficiency and reduce power losses.

Compared with the TPM1R908QM, an 80V product with the previous-generation U-MOS X-H process, the TPM1R408RH achieves approximately 26% lower RDS(ON) of 1.4mΩ (max.) at a gate-source voltage (VGS) of 10V and drain current (ID) of 50A, helping to minimise conduction losses in demanding power designs.

To further improve efficiency, the new MOSFET improves the trade-off between RDS(ON) and total gate charge (Qg), achieving 80nC. The figure-of-merit (FOM) [RDS(ON) × Qg] is approximately 45% lower (1.4mΩ x 80nC = 112mΩ·nC) compared with the TPM1R908QM (1.9mΩ x 108nC = 205.2mΩ·nC). These characteristics reduce switching losses and suppress spike voltage generated between the drain and source during switching, helping to reduce electromagnetic interference (EMI) and enable high-speed switching in switched mode power supplies (SMPS).

The TPM1R408RH supports a drain-source voltage of 80V and a maximum drain current (ID) of 288A (Tc = 25°C), making it suitable for high-current industrial applications. The device is housed in Toshiba’s compact SOP Advance(E) package, which reduces package resistance by approximately 65% and thermal resistance by approximately 15% compared with the existing SOP Advance(N) package, supporting space-efficient system designs.

Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which quickly verifies circuit function, highly accurate G2 SPICE models which reproduce transient characteristics are now available.

Toshiba will continue to expand its lineup of power MOSFETs that improve power supply efficiency, thereby helping to reduce power consumption in equipment.

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