100 V dual-type N-channel MOSFET product with highly allowable power dissipation in a small package: SSM6N815R
Product News 2017-11
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"SSM6N815R" is 100 V dual-type N-channel MOSFET product featuring low On-resistance.
With its low On-resistance characteristics, power dissipation in the circuits can be reduced. And as a dual-type has been implemented in a TSOP6F package, the product can reduce its mounting area by about 40 % compared with a case where two single-type SOT-23F packages are used. It is suitable for applications such as LED lightings and LED drive circuits for LCD TVs that require both a high voltage and a small mounting area.
Features
- Low On-resistance
- Small package [2.9×2.8 mm (typ.)]
- Highly allowable power dissipation rating
Applications
- LED lightings
- LCD TVs
- Industrial equipment
Product Specifications
(@Ta=25°C)
| Part number | Package | Absolute maximum ratings | Drain-source On-resistance RDS(ON) typ. (mΩ) |
Input capacitance Ciss typ. (pF) |
|||||
|---|---|---|---|---|---|---|---|---|---|
| Drain- source voltage VDSS (V) |
Gate- source voltage VGSS (V) |
Drain current (DC) ID (A) |
Power dissipation PD (W) |
@VGS= 4.0 V |
@VGS= 4.5 V |
@VGS= 10 V |
|||
| TSOP6F | 100 | ±20 | 2.0 | 1.4 | 115 | 101 | 84 | 290 | |
Pin Assignment
Application Circuit Example
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.
Comparison of Mounting Area
Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.