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100 V dual-type N-channel MOSFET product with highly allowable power dissipation in a small package: SSM6N815R

Product News 2017-11

The package photograph of 100 V dual-type N-channel MOSFET product with highly allowable power dissipation in a small package: SSM6N815R.

"SSM6N815R" is 100 V dual-type N-channel MOSFET product featuring low On-resistance.
With its low On-resistance characteristics, power dissipation in the circuits can be reduced. And as a dual-type has been implemented in a TSOP6F package, the product can reduce its mounting area by about 40 % compared with a case where two single-type SOT-23F packages are used. It is suitable for applications such as LED lightings and LED drive circuits for LCD TVs that require both a high voltage and a small mounting area.

Features

  • Low On-resistance
  • Small package [2.9×2.8 mm (typ.)]
  • Highly allowable power dissipation rating

Applications

  • LED lightings
  • LCD TVs
  • Industrial equipment

Product Specifications

(@Ta=25°C)

Part number Package Absolute maximum ratings Drain-source On-resistance
RDS(ON) typ.  (mΩ)
Input
capacitance
Ciss
typ.
(pF)
Drain-
source
voltage
VDSS
(V)
Gate-
source
voltage
VGSS
(V)
Drain
current
(DC)
ID
(A)
Power
dissipation
PD
(W)
@VGS=
4.0 V
@VGS=
4.5 V
@VGS=
10 V
SSM6N815R TSOP6F 100 ±20 2.0 1.4 115 101 84 290

Pin Assignment

The illustration of pin assignment of 100 V dual-type N-channel MOSFET product with highly allowable power dissipation in a small package: SSM6N815R.

Application Circuit Example

The illustration of application circuit example of 100 V dual-type N-channel MOSFET product with highly allowable power dissipation in a small package: SSM6N815R.

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.

Comparison of Mounting Area

The illustration of comparison of mounting area of 100 V dual-type N-channel MOSFET product with highly allowable power dissipation in a small package: SSM6N815R.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.