Product News 2017-11
Document Download (PDF:429KB)
"SSM6N815R" is 100 V dual-type N-channel MOSFET product featuring low On-resistance.
With its low On-resistance characteristics, power dissipation in the circuits can be reduced. And as a dual-type has been implemented in a TSOP6F package, the product can reduce its mounting area by about 40 % compared with a case where two single-type SOT-23F packages are used. It is suitable for applications such as LED lightings and LED drive circuits for LCD TVs that require both a high voltage and a small mounting area.
(@Ta=25°C)
Part number | Package | Absolute maximum ratings | Drain-source On-resistance RDS(ON) typ. (mΩ) |
Input capacitance Ciss typ. (pF) |
|||||
---|---|---|---|---|---|---|---|---|---|
Drain- source voltage VDSS (V) |
Gate- source voltage VGSS (V) |
Drain current (DC) ID (A) |
Power dissipation PD (W) |
@VGS= 4.0 V |
@VGS= 4.5 V |
@VGS= 10 V |
|||
TSOP6F | 100 | ±20 | 2.0 | 1.4 | 115 | 101 | 84 | 290 |
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.
Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.