Product News 2018-01
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The four products including “TK750A60F” are new generation 600 V planar power MOSFET π-MOSIX series products.
With an optimized chip design, the π-MOSIX series provides 5 dB lower[1] peak EMI noise than the current π-MOSVII series, while maintaining the same level of efficiency. It offers greater design flexibility and therefore helps reduce design workloads. In addition, the π-MOSIX series has the same rated avalanche current and rated drain current (DC), making it simple to replace existing MOSFET.
Toshiba Electronic Devices & Storage Corporation will expand the portfolio of the π-MOSIX series with the addition of more 600 V devices, as well as 500 V and 650 V devices.
Notes:
[1] Comparison between conventional product TK10A60D and new product TK750A60F (65 W laptop PC adapters in the 200 MHz region)
(@Ta=25 °C)
Part number |
Package | Absolute maximum ratings |
Drain-source On-resistance RDS(ON) max @VGS=10 V (Ω) |
Total gate charge Qg typ. (nC) |
Input capacitance Ciss typ. (pF) |
Current generation (π-MOSVII series) Part number |
|
---|---|---|---|---|---|---|---|
Drain- source voltage VDSS (V) |
Drain current (DC) ID (A) |
||||||
TO-220SIS | 600 | 10 | 0.75 | 30 | 1130 | ||
6 | 1.2 | 21 | 740 |
|
|||
3.7 | 1.9 | 14 | 490 |
|
|||
11 | 0.65 | 34 | 1320 |
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.
Notes:
[2] Values measured by Toshiba Electronic Devices & Storage Corporation
Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.