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Lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.

Product News 2018-03

The package photograph of lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.

The 12 products including “TK2R9E10PL” are new products in the 100 V N-channel power MOSFET U-MOSIX-H series suitable for power supply applications.
The new products expanding the lineup are five TO-220 package products, five TO-220SIS package products, and two DPAK package products. By using the latest generation process U-MOSIX-H with a low voltage trench structure, they feature industry’s lowest level[1] On-resistance and have improved the tradeoff between the On-resistance and output charge[2]. In addition, they have inherited the low gate switch charge characteristics from the existing generation process U-MOSVIII-H, reducing the product of On-resistance and gate switch charge[3], a performance requirement index in switching applications.

Notes:
[1] As of January 2018, from a survey by Toshiba Electronic Devices & Storage Corporation.
[2] TK2R9E10PL has improved its product of On-resistance (typ.) and output charge (typ.) by about 18 % compared with TK100E10N1 (U-MOSVIII-H).
[3] TK2R9E10PL has improved its product of On-resistance (typ.) and gate switch charge (typ.) by about 25 % compared with TK100E10N1 (U-MOSVIII-H).

Features

  • Industry’s lowest level On-resistance[1]
      RDS(ON)=2.9 mΩ (max) @VGS=10 V (TK2R9E10PL)
  • Low output charge and low gate switch charge
  • Allows 4.5 V logic level drive

Applications

  • Various types of power supplies
    (efficient DC-DC converters, efficient AC-DC converters, switching power supplies, etc.)
  • Motor control equipment (motor drives, etc.)

Product Specifications

(Unless otherwise specified, @Ta=25 °C)

Part
number
Absolute
maximum ratings
Drain-source
On-resistance
RDS(ON)  max
(mΩ)
Total
gate
charge
Qg
typ.
(nC)
Gate
switch
charge
QSW
typ.
(nC)
Output
charge
Qoss
typ.
(nC)
Input
capacitance
Ciss
typ.
(pF)
Package
Drain-
source
voltage
VDSS
(V)
Drain
current
(DC)
ID
@TC=25 °C
(A)
@VGS
=10 V
@VGS
=4.5 V
TK2R9E10PL 100 100 2.9 4.1 161 48 164 9500 TO-220
TK3R9E10PL 100 3.9 5.8 96 26 99 6320
TK6R4E10PL 70 6.4 9.7 58 17 58 3455
TK7R2E10PL 60 7.2 11 44 13 47 2800
TK110E10PL 42 10.7 16 33 9.3 32 2040
TK3R2A10PL 100 3.2 4.3 161 48 164 9500 TO-220SIS
TK4R1A10PL 80 4.1 5.9 104 29 99 6320
TK6R7A10PL 56 6.7 10.1 58 17 58 3455
TK7R4A10PL 50 7.4 11.2 44 13 47 2800
TK110A10PL 36 10.8 16 33 9.3 32 2040
TK7R7P10PL 55 7.7 11.5 44 13 47 2800 DPAK
TK110P10PL 40 10.6 16 33 9.3 32 2040

Internal Circuit

The illustration of internal circuit of lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.

Application Circuit Example

The illustration of application circuit example of lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.

The illustration of application circuit example of lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.