Lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.

Product News 2018-03

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The package photograph of lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.

The 12 products including “TK2R9E10PL” are new products in the 100 V N-channel power MOSFET U-MOSIX-H series suitable for power supply applications.
The new products expanding the lineup are five TO-220 package products, five TO-220SIS package products, and two DPAK package products. By using the latest generation process U-MOSIX-H with a low voltage trench structure, they feature industry’s lowest level[1] On-resistance and have improved the tradeoff between the On-resistance and output charge[2]. In addition, they have inherited the low gate switch charge characteristics from the existing generation process U-MOSVIII-H, reducing the product of On-resistance and gate switch charge[3], a performance requirement index in switching applications.

Notes:
[1] As of January 2018, from a survey by Toshiba Electronic Devices & Storage Corporation.
[2] TK2R9E10PL has improved its product of On-resistance (typ.) and output charge (typ.) by about 18 % compared with TK100E10N1 (U-MOSVIII-H).
[3] TK2R9E10PL has improved its product of On-resistance (typ.) and gate switch charge (typ.) by about 25 % compared with TK100E10N1 (U-MOSVIII-H).

Features

  • Industry’s lowest level On-resistance[1]
      RDS(ON)=2.9 mΩ (max) @VGS=10 V (TK2R9E10PL)
  • Low output charge and low gate switch charge
  • Allows 4.5 V logic level drive

Applications

  • Various types of power supplies
    (efficient DC-DC converters, efficient AC-DC converters, switching power supplies, etc.)
  • Motor control equipment (motor drives, etc.)

Product Specifications

(Unless otherwise specified, @Ta=25 °C)

Part
number		 Absolute
maximum ratings		 Drain-source
On-resistance
RDS(ON)  max
(mΩ)		 Total
gate
charge
Qg
typ.
(nC)		 Gate
switch
charge
QSW
typ.
(nC)		 Output
charge
Qoss
typ.
(nC)		 Input
capacitance
Ciss
typ.
(pF)		 Package
Drain-
source
voltage
VDSS
(V)		 Drain
current
(DC)
ID
@TC=25 °C
(A)		 @VGS
=10 V		 @VGS
=4.5 V
100 100 2.9 4.1 161 48 164 9500 TO-220
100 3.9 5.8 96 26 99 6320
70 6.4 9.7 58 17 58 3455
60 7.2 11 44 13 47 2800
42 10.7 16 33 9.3 32 2040
100 3.2 4.3 161 48 164 9500 TO-220SIS
80 4.1 5.9 104 29 99 6320
56 6.7 10.1 58 17 58 3455
50 7.4 11.2 44 13 47 2800
36 10.8 16 33 9.3 32 2040
55 7.7 11.5 44 13 47 2800 DPAK
40 10.6 16 33 9.3 32 2040

Internal Circuit

The illustration of internal circuit of lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.

Application Circuit Example

The illustration of application circuit example of lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.
The illustration of application circuit example of lineup expansion of 100 V N-channel power MOSFET U-MOSIX-H series products that help improve the efficiency of power supplies: TK2R9E10PL, etc.

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

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