Lineup Expansion of New Generation Super Junction Structure N-Channel Power MOSFET “DTMOSVI Series” That Helps Improve Efficiency of Power Supplies
Product News 2022-02
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added four products—“TK090E65Z, TK110E65Z, TK155E65Z, and TK190E65Z”—to its DTMOSVI series of 650 V new generation super junction structure N-channel power MOSFETs that are for switching power supplies of industrial equipment used for data centers, power conditioners for photovoltaic generators and so forth.
The lineup has been expanded with respect to package, drain-source On-resistance, and gate-drain charge.
The new generation DTMOSVI series has reduced the figure of merit “drain-source On-resistance x gate-drain charge” by about 40 %[1] compared to the current generation DTMOSIV-H series. This can improve the efficiency of switching power supplies by about 0.36 %[2].
Toshiba will continue to expand its product lineup to meet market trends and help improve the efficiency of power supplies.
Notes :
[1] Comparison with the current generation DTMOSIV-H series
[2] As of February 2022, values measured by Toshiba (When TK040N65Z of TO-247 package in the new series is compared with TK62N60X of TO-247 package in the current series by using a PFC circuit with an output power of 2500 W)
Applications
Switching power supply for industrial equipment
- Data center (Server, etc.)
- Power conditioners for photovoltaic generators
- Uninterruptible power systems
Features
- The values of “drain-source On-resistance x gate-drain charge” have been reduced by about 40 %[1] to improve the efficiency of switching power supplies.
- Through hole type of TO-220 package
Main Specifications
(@Ta=25 °C)
Part number |
Package |
Absolute maximum ratings |
Electrical characteristics |
Current series (DTMOSIV-H) part number |
||||
|---|---|---|---|---|---|---|---|---|
Name |
Drain- source voltage VDSS (V) |
Drain current (DC) ID (A) |
Drain-source On-resistance RDS(ON) max (Ω) |
Total gate charge Qg typ. (nC) |
Gate- drain charge Qgd typ. (nC) |
Input capacitance Ciss typ. (pF) |
||
@VGS=10 V |
||||||||
TO-220 |
650 |
30 |
0.09 |
47 |
12 |
2780 |
||
24 |
0.11 |
40 |
11 |
2250 |
||||
18 |
0.155 |
29 |
8 |
1635 |
TK20E60W [3] |
|||
15 |
0.19 |
25 |
7.1 |
1370 |
TK16E60W [3] |
|||
Notes :
[3] DTMOSIV series
Internal Circuit
Application Circuit Examples
Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.