Lineup Expansion of 150 V N-Channel MOSFETs Using a New Generation Process That Helps Improve the Efficiency of Power Supplies
Product News 2023-02
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has expanded the lineup of 150 V N-channel power MOSFETs with new products that adopt the new generation process “U-MOS X-H series.” Products in this series are suitable for the switching power supplies of communication equipment and so forth. They are “TPH1400CQH,” which has a drain-source On-resistance of 14.1 ｍΩ, and “TPN4800CQH,” which has a drain-source On-resistance of 48 mΩ. Both of them use surface mount packages.
The new products have reduced their drain-source On-resistance compared with the 150 V products using the current generation process U-MOS VIII-H series. In addition, by optimizing the device structure, the products have improved the tradeoff between the drain-source On-resistance and output charge[1], featuring industry-leading[2] low power loss. Moreover, the products have reduced the spike voltage generated between the drain and the source when switching, helping lower the EMI of switching power supplies.
Notes :
[1] Reduced the drain-source On-resistance (typ.) × output charge (typ.), a figure of merit for switching applications.
TPH1400CQH: About 41 % reduction compared to the current product TPH1500CNH (U-MOS VIII-H series)
TPN4800CQH: About 20 % reduction compared to the current product TPN5900CNH (U-MOS VIII-H series)
[2] Among products with equivalent ratings, according to Toshiba (as of January 2023).
Applications
- Power supplies for communication equipment
- Switching power supplies (High efficiency DC-DC converters, etc.)
Features
- Featuring one of the industry-leading[２] low power loss
(improving the trade-off between the On-resistance and output charge) - Low On-resistance :
TPH1400CQH RDS(ON)=14.1 mΩ (max) (VGS=10 V)
TPN4800CQH RDS(ON)=48 mΩ (max) (VGS=10 V)
- High channel temperature rating : Tch (max)=175 °C
Main Specifications
(Unless otherwise specified, Ta=25 °C)
Part number |
|||||||
|---|---|---|---|---|---|---|---|
Series |
U-MOSⅩ-H |
||||||
Absolute Maximum Ratings |
Drain-source voltage VDSS (V) |
150 |
|||||
Channel temperature Tch (°C) |
175 |
||||||
Drain current (DC) ID (A) |
Tc=25 °C |
64 |
32 |
18 |
|||
Drain-source On-resistance RDS(ON) (mΩ) |
VGS= 10 V |
max | 9.0 |
14.1 |
48 |
||
VGS= 8 V |
max | 11 |
17.3 |
59 |
|||
Total gate charge (gate-source plus gate-drain) Qg (nC) |
VGS= 10 V |
typ. | 44 |
31 |
11 |
||
Gate switch charge Qsw (nC) |
typ. | 11.7 |
8.5 |
3.3 |
|||
Output charge Qoss (nC) |
typ. | 87 |
56 |
21 |
|||
Input capacitance Ciss (pF) |
typ. | 3500 |
2400 |
800 |
|||
Package name |
SOP Advance |
SOP Advance(N) |
SOP Advance(N) |
TSON Advance |
|||
Package size (mm) |
typ. | 5.0 × 6.0 |
4.9 × 6.1 |
4.9 × 6.1 |
3.3 × 3.3 |
||
Notes:
[3] Precedence release products
Pin Assignment
Application Circuit Examples
Note :
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
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