Expanded Lineup of Power MOSFETs with High-Speed Diodes that Help to Improve Efficiency of Power Supplies
Product News 2024-07
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched 650V N-channel power MOSFETs "TK068N65Z5, TK095E65Z5, TK095A65Z5, TK095V65Z5, TK115E65Z5, TK115A65Z5, TK115V65Z5 and TK115N65Z5" and has added them to the lineup of Toshiba's latest-generation[1] DTMOSVI series with high-speed diodes (DTMOSVI (HSD)) that uses super junction structure and is suitable for high-efficiency switching power supplies for data centers and power conditioners for photovoltaic generators. Packages of the new products are TO-247, TO-220SIS, TO-220 and DFN8×8.
The new products with the DTMOSVI (HSD) process use high-speed diodes to improve the reverse recovery[2] characteristics important for bridge circuit and inverter circuit applications. Against Toshiba’s existing product TK090A65Z of the standard type DTMOSVI, the new product TK095A65Z5 achieves an approximately 65%[3] reduction in reverse recovery time (trr), and an approximately 88%[3] reduction in reverse recovery charge (Qrr) (measurement conditions: -dIDR/dt=100A/μs). In addition, the DTMOSVI (HSD) process improves on the reverse recovery[2] characteristics of Toshiba's existing products DTMOSIV series with high-speed diodes (DTMOSIV (HSD)), and has a lower drain cut-off current at high temperatures. Furthermore, the figure of merit "drain-source On-resistance × gate-drain charge" is also lower. The high temperature drain cut-off current of the new product TK095A65Z5 is approximately 91%[4] lower, and the drain-source On-resistance × gate-drain charge approximately 70%[3] lower, than in Toshiba’s existing product TK35A65W5[5]. This advance will cut equipment power loss and help to improve efficiency.
A reference design, "1.6kW Server Power Supply (Upgraded)", that uses the same series product TK095N65Z5 is available on Toshiba’s website.
Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.
Toshiba also will continue to expand its lineup of the DTMOSVI series. This will enhance switching power supply efficiency, contributing to energy-saving equipment.
Notes:
[1] As of July 17, 2024, Toshiba survey.
[2] A switching action in which the MOSFET body diode switches from forward to reverse biased.
[3] Values measured by Toshiba.
[4] Values measured by Toshiba. The new product TK095A65Z5 is 0.23mA (test condition: VDS=650V, VGS=0V, Ta=150°C).
The Toshiba’s existing product TK35A65W5 is 2.6mA (test condition: VDS=650V, VGS=0V, Ta=150°C).
[5] DTMOSIV (HSD) series
Applications
Industrial equipment
- Switching power supplies (data center servers, communications equipment, etc.)
- EV charging stations
- Power conditioners for photovoltaic generators
- Uninterruptible power systems
Features
- MOSFETs with high-speed diodes in the latest-generation[1] DTMOSVI series
- Reverse recovery time due to high-speed diodes:
TK068N65Z5 trr=135ns (typ.)
TK095E65Z5, TK095A65Z5, TK095V65Z5 trr=115ns (typ.)
TK115E65Z5, TK115A65Z5, TK115V65Z5, TK115N65Z5 trr=110ns (typ.) - High-speed switching time due to low gate-drain charge:
TK068N65Z5 Qgd=22nC (typ.)
TK095E65Z5, TK095A65Z5, TK095V65Z5 Qgd=17nC (typ.)
TK115E65Z5, TK115A65Z5, TK115V65Z5, TK115N65Z5 Qgd=14nC (typ.)
Main Specifications
(Ta=25°C)
Part number |
Package |
Drain- source voltage VDSS (V) |
Drain current (DC) ID (A) |
Drain- source On-resistance RDS(ON) (Ω) |
Total gate charge Qg (nC) |
Gate- drain charge Qgd (nC) |
Input capacitance Ciss (pF) |
Channel- to-case thermal resistance Rth(ch-c) (°C/W) |
Reverse recovery time trr (ns) |
Toshiba’s existing series (DTMOSIV) part number |
|---|---|---|---|---|---|---|---|---|---|---|
VGS=10V |
||||||||||
Max |
Typ. |
Typ. |
Typ. |
Max |
Typ. |
|||||
| TK068N65Z5 | TO-247 |
650 |
37 |
0.068 |
68 |
22 |
3765 |
0.462 |
135 |
TK39N60W5[6] |
TO-220 |
29 |
0.095 |
50 |
17 |
2880 |
0.543 |
115 |
－ |
||
TO-220SIS |
2.77 |
|||||||||
DFN8×8 |
28 |
0.543 |
TK31V60W5[6] | |||||||
TO-220 |
24 |
0.115 |
42 |
14 |
2280 |
0.657 |
110 |
TK25E60X5[6] |
||
TO-220SIS |
2.77 |
TK25A60X5[6] |
||||||||
TO-247 |
0.657 |
TK25N60X5[6] |
||||||||
DFN8×8 |
23 |
0.657 |
TK31V60W5[6] |
[6] VDSS=600V
Characteristic Curves[3]
* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.