Expanded Lineup of Power MOSFETs with High-Speed Diodes that Help to Improve Efficiency of Power Supplies

Product News 2024-07

The package photograph of expanded lineup of power MOSFETs with high-speed diodes that help to improve efficiency of power supplies.

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched 650V N-channel power MOSFETs "TK068N65Z5, TK095E65Z5, TK095A65Z5, TK095V65Z5, TK115E65Z5, TK115A65Z5, TK115V65Z5 and TK115N65Z5" and has added them to the lineup of Toshiba's latest-generation[1] DTMOSVI series with high-speed diodes (DTMOSVI (HSD)) that uses super junction structure and is suitable for high-efficiency switching power supplies for data centers and power conditioners for photovoltaic generators. Packages of the new products are TO-247, TO-220SIS, TO-220 and DFN8×8.

The new products with the DTMOSVI (HSD) process use high-speed diodes to improve the reverse recovery[2] characteristics important for bridge circuit and inverter circuit applications. Against Toshiba’s existing product TK090A65Z of the standard type DTMOSVI, the new product TK095A65Z5 achieves an approximately 65%[3] reduction in reverse recovery time (trr), and an approximately 88%[3] reduction in reverse recovery charge (Qrr) (measurement conditions: -dIDR/dt=100A/μs). In addition, the DTMOSVI (HSD) process improves on the reverse recovery[2] characteristics of Toshiba's existing products DTMOSIV series with high-speed diodes (DTMOSIV (HSD)), and has a lower drain cut-off current at high temperatures. Furthermore, the figure of merit "drain-source On-resistance × gate-drain charge" is also lower. The high temperature drain cut-off current of the new product TK095A65Z5 is approximately 91%[4] lower, and the drain-source On-resistance × gate-drain charge approximately 70%[3] lower, than in Toshiba’s existing product TK35A65W5[5]. This advance will cut equipment power loss and help to improve efficiency.

A reference design, "1.6kW Server Power Supply (Upgraded)", that uses the same series product TK095N65Z5 is available on Toshiba’s website.

Toshiba also offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.

Toshiba also will continue to expand its lineup of the DTMOSVI series. This will enhance switching power supply efficiency, contributing to energy-saving equipment.

Notes:
[1] As of July 17, 2024, Toshiba survey.
[2] A switching action in which the MOSFET body diode switches from forward to reverse biased.
[3] Values measured by Toshiba.
[4] Values measured by Toshiba. The new product TK095A65Z5 is 0.23mA (test condition: VDS=650V, VGS=0V, Ta=150°C).
The Toshiba’s existing product TK35A65W5 is 2.6mA (test condition: VDS=650V, VGS=0V, Ta=150°C).
[5] DTMOSIV (HSD) series

Applications

Industrial equipment

  • Switching power supplies (data center servers, communications equipment, etc.)
  • EV charging stations
  • Power conditioners for photovoltaic generators
  • Uninterruptible power systems

Features

  • MOSFETs with high-speed diodes in the latest-generation[1] DTMOSVI series
  • Reverse recovery time due to high-speed diodes:
    TK068N65Z5  trr=135ns (typ.)
    TK095E65Z5, TK095A65Z5, TK095V65Z5  trr=115ns (typ.)
    TK115E65Z5, TK115A65Z5, TK115V65Z5, TK115N65Z5  trr=110ns (typ.)
  • High-speed switching time due to low gate-drain charge:
    TK068N65Z5  Qgd=22nC (typ.)
    TK095E65Z5, TK095A65Z5, TK095V65Z5  Qgd=17nC (typ.)
    TK115E65Z5, TK115A65Z5, TK115V65Z5, TK115N65Z5  Qgd=14nC (typ.)

Main Specifications

(Ta=25°C)

Part number

Package

Drain-

source

voltage

VDSS

(V)

Drain

current

(DC)

ID

(A)

Drain-

source

On-resistance

RDS(ON)

(Ω)

Total

gate

charge

Qg

(nC)

Gate-

drain

charge

Qgd

(nC)

Input

capacitance

Ciss

(pF)

Channel-

to-case

thermal

resistance

Rth(ch-c)

(°C/W)

Reverse

recovery

time

trr

(ns)

Toshiba’s

existing series

(DTMOSIV)

part number

VGS=10V

Max

Typ.

Typ.

Typ.

Max

Typ.

TK068N65Z5

TO-247

650

37

0.068

68

22

3765

0.462

135

TK49N65W5,

TK39N60W5[6]

TK095E65Z5

TO-220

29

0.095

50

17

2880

0.543

115

TK095A65Z5

TO-220SIS

2.77

TK35A65W5

TK095V65Z5

DFN8×8

28

0.543

TK31V60W5[6]

TK115E65Z5

TO-220

24

0.115

42

14

2280

0.657

110

TK25E60X5[6]

TK115A65Z5

TO-220SIS

2.77

TK25A60X5[6]

TK115N65Z5

TO-247

0.657

TK28N65W5,

TK25N60X5[6]

TK115V65Z5

DFN8×8

23

0.657

TK28V65W5,

TK31V60W5[6]

[6] VDSS=600V

Characteristic Curves[3]

The illustration of characteristic curves of expanded lineup of power MOSFETs with high-speed diodes that help to improve efficiency of power supplies.
The illustration of characteristic curves of expanded lineup of power MOSFETs with high-speed diodes that help to improve efficiency of power supplies.
The illustration of characteristic curves of expanded lineup of power MOSFETs with high-speed diodes that help to improve efficiency of power supplies.

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