Toshiba Electronic Devices & Storage Corporation Releases Small Active-Clamp MOSFET for Relay Drivers
September 25, 2017
Toshiba Electronic Devices & Storage Corporation
TOKYO - Toshiba Electronic Devices & Storage Corporation (TDSC) today announced the launch of “SSM3K357R,” a new MOSFET that adopts an active-clamp structure with a built-in diode between the drain and gate terminals. The device is suited to driving inductive loads, such as mechanical relays. Volume shipments start today.
The SSM3K357R protects drivers against damage from voltage surges, such as back-EMF caused by inductance. It integrates a pull-down resistor, series resistor and Zener diode, which helps reduce the part count and save on board space.
An industry-standard SOT-23-class package, a low operating voltage of 3.0V and AEC-Q101 qualification make the SSM3K357R suitable for automotive and many other applications.
Applications
- Relay and solenoid control for automotive
- Relay and solenoid control for industry
- Clutch control for OA equipment
Features
- Active clamp structure suitable for driving an inductive load
- Low operating voltage of 3.0 V
- AEC-Q101 qualified
Main Specifications
Items |
Characteristics | ||
|---|---|---|---|
| Absolute maximum ratings | Drain-source voltage VDSS (V) |
60 | |
| Gate-source voltage VGSS (V) |
±12 | ||
| Drain current ID (A) |
0.65 | ||
| Electrical Characteristics | Drain-source on-resistance RDS(ON) typ. (mΩ) |
|VGS|=3.0V | 1200 |
| |VGS|=5.0V | 800 | ||
| Total gate charge Qg typ. (nC) |
1.5 | ||
| Input capacitance Ciss typ. (pF) |
43 | ||
| Package | SOT-23F | 2.9mm×2.4mm; t=0.8mm | |
Equivalent Circuit
Customer Inquiries:
Small Signal Device Sales & Marketing Department
Tel: +81-3-3457-3411
*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.