Toshiba Electronic Devices & Storage Corporation Releases Small Active-Clamp MOSFET for Relay Drivers

September 25, 2017

Toshiba Electronic Devices & Storage Corporation

SOT-23

TOKYO - Toshiba Electronic Devices & Storage Corporation (TDSC) today announced the launch of “SSM3K357R,” a new MOSFET that adopts an active-clamp structure with a built-in diode between the drain and gate terminals. The device is suited to driving inductive loads, such as mechanical relays. Volume shipments start today.

The SSM3K357R protects drivers against damage from voltage surges, such as back-EMF caused by inductance. It integrates a pull-down resistor, series resistor and Zener diode, which helps reduce the part count and save on board space.

An industry-standard SOT-23-class package, a low operating voltage of 3.0V and AEC-Q101 qualification make the SSM3K357R suitable for automotive and many other applications.

Applications

  • Relay and solenoid control for automotive
  • Relay and solenoid control for industry
  • Clutch control for OA equipment

Features

  • Active clamp structure suitable for driving an inductive load
  • Low operating voltage of 3.0 V
  • AEC-Q101 qualified

Main Specifications

Items
(Ta=25℃)

Characteristics
Absolute maximum ratings Drain-source voltage
VDSS (V)
60
Gate-source voltage
VGSS (V)
±12
Drain current
ID (A)
0.65
Electrical Characteristics Drain-source on-resistance
RDS(ON) typ. (mΩ)
|VGS|=3.0V 1200
|VGS|=5.0V 800
Total gate charge
Qg typ. (nC)
1.5
Input capacitance
Ciss typ. (pF)
43
Package SOT-23F 2.9mm×2.4mm; t=0.8mm

Equivalent Circuit

SSM3K357R Equivalent Circuit

Customer Inquiries:

Small Signal Device Sales & Marketing Department
Tel: +81-3-3457-3411

*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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