Toshiba Electronic Devices & Storage Corporation Adds Second-Generation 650V SiC Schottky Barrier Diodes in DPAK Surface-Mount Type Package
October 17, 2017
Toshiba Electronic Devices & Storage Corporation
Second-generation devices provide improved surge peak forward current and figure of merit, now in a surface-mount type package
TOKYO— Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages. Volume shipments start today.
Until now, TDSC has focused on SiC SBDs in through-hole packages. The addition of TDSC’s first SiC SBDs in surface-mount packages (nicknamed DPAK) meets customer needs to reduce system size and thickness.
The new SiC SBDs incorporate Toshiba’s latest second-generation chip, which delivers improvements in surge peak forward current (IFSM) and figure of merit (VF・Qc[1]). The devices offer enhanced ruggedness and low loss, which helps to improve system efficiency and simplify thermal design.
TDSC will continue to expand its product portfolio in order to help improve the efficiency and reduce the size of communications equipment, servers, inverters and other products.
Features
- High surge peak forward current:
Approx. 7 to 9.5 times the current rating, IF(DC)
- Low figure of merit (VF・Qc):
- About 1/3 lower than first generation products, indicating high efficiency.
- Surface-mount package:
Enables auto mounters and helps to reduce system size and thickness
Applications
The new SiC SBDs are suitable for a wide range of commercial and industrial applications, including PFC circuitry in high-efficiency power supplies.
- Consumer and OA products: power supply for large screen 4K LCD & OLED TVsets, projectors, multifunction copiers, etc.
- Industrial equipment: power supply for telecommunication base stations, PC servers, solar microinverters, etc.
- For circuits: power factor correction (PFC) circuits; micro inverter circuits; chopper circuits (various power supplies of hundreds of watts or more).
- Free-wheel diode for switching device.
Main Specifications
| Package | Absolute Maximum Ratings | Electrical Characteristics | |||||||
|---|---|---|---|---|---|---|---|---|---|
| Forward DC current | Non-repetitive Peak Forward Surge Current | Total Power Dissipation | Junction temperature | Forward Voltage | Figure of merit | Junction Capacitance | Total Capacitive Charge | ||
| Symbol | IF(DC) | IFSM | Ptot | Tj | VF | VF・QC | Cj | QC | |
| Unit | (A) | (A) | (W) | (℃) | (V) | (V･nC) | (pF) | (nC) | |
| Value | Max. | Max. | Max. | Max. | － | Typ. | Typ. | Typ. | |
| Product/ Condition | － | @ Half-sine Wave t=10ms |
Tc=25℃ | － | ＠ IF(DC) | － | @ VR=1V | @VR=400V | |
| Surface-mount type DPAK / Equivalent to TO-252 | TRS2P65F | 2 | 19 | 34.0 | 175 | 1.45 (Typ.) 1.60 (Max.) |
8.4 | 85 | 5.8 |
| TRS3P65F | 3 | 26 | 37.5 | 11.7 | 120 | 8.1 | |||
| TRS4P65F | 4 | 33 | 41.0 | 15.1 | 165 | 10.4 | |||
| TRS6P65F | 6 | 45 | 48.3 | 21.9 | 230 | 15.1 | |||
| TRS8P65F | 8 | 58 | 55.5 | 28.6 | 300 | 19.7 | |||
| TRS10P65F | 10 | 70 | 62.5 | 35.4 | 400 | 24.4 | |||
Note:
[1] Qc : Electric charge amount of capacitance Cj between 0.1 V and 400 V.
Follow the link below for more on TDSC’s SiC Schottky Barrier Diode line-up.
Customer Inquiries:
Power Device Sales & Marketing Department
Tel: +81-3-3457-3933
*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.