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Toshiba Electronic Devices & Storage Corporation Adds Second-Generation 650V SiC Schottky Barrier Diodes in DPAK Surface-Mount Type Package

October 17, 2017

Toshiba Electronic Devices & Storage Corporation

Second-generation devices provide improved surge peak forward current and figure of merit, now in a surface-mount type package


TOKYO— Toshiba Electronic Devices & Storage Corporation (TDSC) has enhanced its diode portfolio with the addition of six Schottky barrier diodes (SBDs) fabricated with silicon carbide (SiC) and housed in surface-mount packages. Volume shipments start today.

Until now, TDSC has focused on SiC SBDs in through-hole packages. The addition of TDSC’s first SiC SBDs in surface-mount packages (nicknamed DPAK) meets customer needs to reduce system size and thickness.

The new SiC SBDs incorporate Toshiba’s latest second-generation chip, which delivers improvements in surge peak forward current (IFSM) and figure of merit (VF・Qc[1]). The devices offer enhanced ruggedness and low loss, which helps to improve system efficiency and simplify thermal design.

TDSC will continue to expand its product portfolio in order to help improve the efficiency and reduce the size of communications equipment, servers, inverters and other products.


High surge peak forward current:

Approx. 7 to 9.5 times the current rating, IF(DC)

Low figure of merit (VF・Qc):
About 1/3 lower than first generation products, indicating high efficiency.
Surface-mount package:

Enables auto mounters and helps to reduce system size and thickness


The new SiC SBDs are suitable for a wide range of commercial and industrial applications, including PFC circuitry in high-efficiency power supplies.

  • Consumer and OA products: power supply for large screen 4K LCD & OLED TVsets, projectors, multifunction copiers, etc.
  • Industrial equipment: power supply for telecommunication base stations, PC servers, solar microinverters, etc.
  • For circuits: power factor correction (PFC) circuits; micro inverter circuits; chopper circuits (various power supplies of hundreds of watts or more).
  • Free-wheel diode for switching device.

Main Specifications

Package   Absolute Maximum Ratings Electrical Characteristics
Forward DC current Non-repetitive Peak Forward Surge Current Total Power Dissipation Junction temperature Forward Voltage Figure of merit Junction Capacitance Total Capacitive Charge
  Symbol IF(DC) IFSM Ptot Tj VF VF・QC Cj QC
Unit (A) (A) (W) (℃) (V) (V・nC) (pF) (nC)
Value Max. Max. Max. Max. Typ. Typ. Typ.
Product/ Condition @ Half-sine Wave
Tc=25℃ @ IF(DC) @ VR=1V @VR=400V
Surface-mount type DPAK / Equivalent to TO-252 TRS2P65F 2 19 34.0 175

1.45 (Typ.)

1.60 (Max.)

8.4 85 5.8
TRS3P65F 3 26 37.5 11.7 120 8.1
TRS4P65F 4 33 41.0 15.1 165 10.4
TRS6P65F 6 45 48.3 21.9 230 15.1
TRS8P65F 8 58 55.5 28.6 300 19.7
TRS10P65F 10 70 62.5 35.4 400 24.4


[1] Qc : Electric charge amount of capacitance Cj between 0.1 V and 400 V.

Follow the link below for more on TDSC’s SiC Schottky Barrier Diode line-up.

Customer Inquiries:

Power Device Sales & Marketing Department
Tel: +81-3-3457-3933

*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.