July 10, 2018
Toshiba Electronic Devices & Storage Corporation
New packaging design provides 50% reduction in thermal resistance compared to conventional USC packaging
TOKYO—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) announces the launch of a new Schottky barrier diode product “CUHS10F60.” The device is targeted at applications such as rectification and backflow prevention in power supply circuits. Mass production and shipments start today
The new CUHS10F60 features a low thermal resistance of 105°C/W in its newly developed US2H package that has the packaging code “SOD-323HE”. The package’s thermal resistance has been reduced by about 50% compared to the conventional USC package, enabling easier thermal design.
Further improvements in performance have also been made when compared to other family members. In comparison to the CUS04 Schottky diode, the maximum reverse current has been reduced by around 60% to 40µA. This contributes to a lower power consumption in applications where it is used. In addition, its reverse voltage has been increased from 40V to 60V. This increases the range of applications where it can be used compared to the CUS10F40.
|Absolute maximum ratings||Reverse voltage VR (V)||60|
|Average rectified current IO (A)||1.0|
|Electrical characteristics||Forward voltage VFtyp.(V)||@IF=0.5 A||0.46|
|Reverse current IRmax@VR=60 V(μA)||40|
|Size typ. (mm)||2.5x1.4|
|Stock Check & Purchase|
 Mounted on an FR4 board (25.4mm × 25.4mm × 1.6mm, Cu Pad: 645mm2)
 Absolute Maximum Ratings: VRRM=60V, IF(AV)=0.7A
 Test Condition: Reverse voltage VR=60V
 Absolute Maximum Ratings: VR=40V,IO=1.0A
Follow the link below to check inventory of the new product available at online distributors.
Small Signal Device Sales & Marketing Department
*Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.