Toshiba’s New Discrete IGBT for Voltage Resonance Circuits Contributes to Lower Power Consumption and Easier Design of Equipment
December 23, 2019
Toshiba Electronic Devices & Storage Corporation
TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the “GT20N135SRA,” a 1350V discrete IGBT for use in voltage resonance circuits in tabletop IH cookers, IH rice cookers, microwave ovens and other home appliances. Shipments start today.
GT20N135SRA features a collector-emitter saturation voltage[1] of 1.75V and a diode forward voltage[2] of 1.8V, approximately 10% and 21% lower, respectively, than for the current product[3]. Both the IGBT and diode have improved conduction loss characteristics at high temperature (TC=100℃), and the new IGBT can help reduce equipment power consumption. It also features a junction-to-case thermal resistance of 0.48℃/W (max), about 26% lower than that of the current product[3], allowing easier thermal design.
The new IGBT suppresses short circuit current that flows through the resonance capacitor when equipment is switched on. Its circuit current[4] peak value is 129A, about a 31% reduction from the current product[3]. As its safe operating area is widened, it makes equipment design easier compared to the current product[3].
Applications
Home appliances (such as tabletop IH cookers, IH rice cookers and microwave ovens) that use voltage resonance circuits
Features
- Low conduction loss:
VCE(sat)=1.6V(typ.) (@IC=20A, VGE=15V, Ta=25℃)
VF=1.75V (typ.) (@IF=20A, VGE=0V, Ta=25℃) - Low junction-to-case thermal resistance: Rth(j-C)=0.48℃/W (max)
- Suppresses short circuit current that flows through the resonance capacitor when equipment is switched on.
- Wide safe operating area
Main Specifications
(Unless otherwise specified, @Ta=25 °C)
Part Number |
Package |
Absolute maximum ratings |
Collector-emitter saturation voltage VCE(sat) typ. @IC＝20A、 VGE=15V (V) |
Diode forward voltage VF typ. @IF=20A, VGE=0V （Ｖ） |
Switching time (fall time) tf typ. ＠Resistive load (μs) |
Junction-to-case thermal resistance Rth(j-C) max (℃/W) |
|||
|---|---|---|---|---|---|---|---|---|---|
Collector-emitter voltage VCES (V) |
Collector current (DC) IＣ @TC=25℃ (A) |
Collector current (DC) IＣ @TC=100℃ (A) |
Junction temperature Tj (℃) |
||||||
TO-247 |
1350 |
40 |
20 |
175 |
1.60 |
1.75 |
0.25 |
0.48 |
|
Notes:
[1] As of June 2019, values measured by Toshiba. (Test condition: IC=20A, VGE=15V, TC=100℃)
[2] As of June 2019, values measured by Toshiba. (Test condition: IF=20A, VGE=0V, TC=100℃)
[3] Toshiba’s current product “GT40RR21”
[4] As of June 2019, values measured by Toshiba. (Test condition: VCC=300V, VGG=15V, C=0.33μF, t=5μs, Ta=25℃)
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