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Toshiba’s New Discrete IGBT for Voltage Resonance Circuits Contributes to Lower Power Consumption and Easier Design of Equipment

December 23, 2019

Toshiba Electronic Devices & Storage Corporation

GT20N135SRA

TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the  “GT20N135SRA,” a 1350V discrete IGBT for use in voltage resonance circuits in tabletop IH cookers, IH rice cookers, microwave ovens and other home appliances. Shipments start today.

GT20N135SRA features a collector-emitter saturation voltage[1] of 1.75V and a diode forward voltage[2] of 1.8V, approximately 10% and 21% lower, respectively, than for the current product[3]. Both the IGBT and diode have improved conduction loss characteristics at high temperature (TC=100℃), and the new IGBT can help reduce equipment power consumption. It also features a junction-to-case thermal resistance of 0.48℃/W (max), about 26% lower than that of the current product[3], allowing easier thermal design.

The new IGBT suppresses short circuit current that flows through the resonance capacitor when equipment is switched on. Its circuit current[4] peak value is 129A, about a 31% reduction from the current product[3]. As its safe operating area is widened, it makes equipment design easier compared to the current product[3].

Applications

Home appliances (such as tabletop IH cookers, IH rice cookers and microwave ovens) that use voltage resonance circuits

Features

  • Low conduction loss:
    VCE(sat)=1.6V(typ.) (@IC=20A, VGE=15V, Ta=25℃)
    VF=1.75V (typ.) (@IF=20A, VGE=0V, Ta=25℃)
  • Low junction-to-case thermal resistance: Rth(j-C)=0.48℃/W (max)
  • Suppresses short circuit current that flows through the resonance capacitor when equipment is switched on.
  • Wide safe operating area

Main Specifications

(Unless otherwise specified, @Ta=25 °C)

Part

Number

Package

Absolute maximum ratings

Collector-emitter saturation voltage

VCE(sat)

typ.

@IC=20A、

VGE=15V

(V)

Diode forward voltage

VF

typ.

@IF=20A,

VGE=0V

(V)

Switching time

(fall time)

tf

typ.

@Resistive load

(μs)

Junction-to-case thermal resistance

Rth(j-C)

max

(℃/W)

Collector-emitter voltage

VCES

(V)

Collector current

(DC)

I

@TC=25℃

(A)

Collector current

(DC)

I

@TC=100℃

(A)

Junction temperature

Tj

(℃)

GT20N135SRA

TO-247

1350

40

20

175

1.60

1.75

0.25

0.48

Notes:

[1] As of June 2019, values measured by Toshiba. (Test condition: IC=20A, VGE=15V, TC=100℃)

[2] As of June 2019, values measured by Toshiba. (Test condition: IF=20A, VGE=0V, TC=100℃)

[3] Toshiba’s current product “GT40RR21”

[4] As of June 2019, values measured by Toshiba. (Test condition: VCC=300V, VGG=15V, C=0.33μF, t=5μs, Ta=25℃)

Follow the link below for more on the new product.
Follow the link below for more on Toshiba IGBT line-up.

*Company names, product names, and service names may be trademarks of their respective companies.

Customer Inquiries:

Power Device Sales & Marketing Department

Tel: +81-3-3457-3933

Contact

Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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