June 29, 2023
Toshiba Electronic Devices & Storage Corporation
KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-generation process, U-MOS X-H. The product targets applications such as switching circuits and hot swap circuits on the power lines of industrial equipment used for data centers and communications base stations. Shipments start today.
TPH3R10AQM has industry-leading 3.1mΩ maximum drain-source On-resistance, 16% lower than Toshiba’s 100V product, “TPH3R70APL,” which uses the earlier generation process. By the same comparison, TPH3R10AQM has expanded its safe operating area by 76% making it suitable for linear mode operation. Reducing the On-resistance and expanding the linear operating range in the safe operating area reduce the number of parallel connections. Furthermore, its gate threshold voltage range of 2.5V to 3.5V, makes it less likely to malfunction due to gate voltage noise.
The new product uses the highly footprint compatible SOP Advance(N) package.
Toshiba will continue to expand its line-up of power MOSFETs that can increase the efficiency of power supplies by reducing loss, and help lower equipment power consumption.
 The circuit for connecting and disconnecting components to a system without shutting down the system while the equipment is in operation.
 Toshiba survey as of June 2023.
 Pulse width: tw=10ms, VDS=48V
(Unless otherwise specified, Ta=25°C)
|Absolute Maximum Ratings||Drain-source voltage VDSS (V)||100|
|Drain current (DC) ID (A)||Tc=25°C||120|
|Channel temperature Tch (°C)||175|
|Electrical Characteristics||Drain-source On-resistance RDS(ON) max (mΩ)||VGS=10V||3.1|
|Total gate charge (gate-source plus gate-drain) Qg typ. (nC)||83|
|Gate switch charge Qsw typ. (nC)||32|
|Output charge Qoss typ. (nC)||88|
|Input capacitance Ciss typ. (pF)||5180|
|Size typ. (mm)||4.9×6.1|
|Sample Check & Availability|
Power Device Sales & Marketing Dept.
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