Asia-Pacific
English
简体中文
繁體中文
한국어
日本語
Americas
English
Europe (EMEA)
English



Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Toshiba further expands super junction MOSFET range with four additional 650V devices

Improved performance and reduced losses will enhance power supply efficiency

05th April 2022

Toshiba further expands super junction MOSFET range with four additional 650V devices

Toshiba Electronics Europe GmbH (“Toshiba”) has added a further four N-channel super junction 650 V power MOSFET devices to extend their DTMOSVI series. The new devices build upon the market success of the current devices and will primarily be used in applications like Industrial and lighting power supply and other applications where ultimate efficiency at small form factor is a requirement.

The new TK090E65Z, TK110E65Z, TK155E65Z, and TK190E65Z MOSFETs achieve a 40% reduction in the drain-source on-resistance (RDSON) x gate-drain charge (Qgd) figure of merit (FoM) when compared to the previous DTMOS generation. This will translate into a substantial decrease in switching losses over earlier devices.  As a result, designs incorporating the new devices will see an increase in efficiency. The performance enhancement will apply to new designs as well as upgrades of existing designs.

All four of the new devices offer a drain-source voltage (VDSS) of 650 V with a drain current (ID) capability up to 30 A. Drain-source on-resistance (RDSON) is as low as 0.09Ω and the gate-drain charge (Qgd) can be as low as 7.1 nC, allowing low-loss operation at high speeds. All devices are packaged in industry-standard TO-220 through-hole packages.

Toshiba will continue to expand its product lineup to meet market trends and help improve the efficiency of power supplies.