31st August 2022
Toshiba Electronics Europe GmbH (“Toshiba”) has launched the TLP5222 smart gate-driver photocoupler for MOSFETs and IGBTs, which has ±2.5A output-current capability and built-in over-current protection with automatic recovery.
The TLP5222 continuously monitors the MOSFET drain-source voltage (VDS) or IGBT collector-emitter voltage (VCE). If an overcurrent occurs, the driver’s built-in protection circuitry detects the associated rise in VDS or VCE
In addition, the TLP5222 has an under voltage lockout (UVLO) and an integrated active Miller clamping function that suppresses dV/dt-induced turn-on to prevent short-circuiting of upper and lower arms in a half bridge. These built-in features help simplify design and minimize external components.
Housed in a SO16L package that ensures creepage and clearance distances of at least 8mm (min.), the TLP5222 is used in equipment requiring high insulation performance. In addition, the rated operating-temperature range from -40°C to +110°C makes the driver suitable for applications that are deployed in harsh thermal environments such as photovoltaic power generation systems and uninterruptible power supplies (UPS).
The TLP5222 extends Toshiba’s family of smart gate driver devices that also includes the TLP5212, TLP5214A and TLP5214, which have no automatic recovery function and are reset by an external signal. The family thus gives engineers freedom to select the optimum device to meet their application requirements.