SiC 650V Schottky barrier diodes with forward voltage of 1.2V released by Toshiba

Toshiba Electronics Europe GmbH (“Toshiba”) announces the launch of twelve 650V silicon carbide (SiC) Schottky barrier diode (SBDs) based upon their latest 3^rd generation technology. The new devices are specifically intended for use in efficiency-critical industrial equipment applications including switching power supplies, electric vehicle (EV) charging stations and photovoltaic (PV) inverters. 

Known as the TRSxxx65H series, the new devices use new Schottky metal. The 3^rd generation SiC SBDs chip optimizes the junction barrier Schottky (JBS) structure of the 2^nd generation products, thereby lowering the electric field at the Schottky interface and reducing leakage current – delivering enhanced efficiency.

The 3^rd generation devices achieve excellent low forward voltage (V_F) of 1.2V (typ.). This represents a 17% reduction when compared to 2^nd generation products. The new 3^rd generation products have improved the trade-offs between V_F and total capacitive charge (Q_C) which is typically 17nC for the TRS6E65H.

Also, the V_F and reverse current (I_R) ratio is improved compared to 2^nd generation products with the TRS6E65H achieving a typical I_R value of 1.1µA. All of these improvements reduce power dissipation and contribute to higher levels of efficiency within end equipment.

Devices within the TRSxxx65H series are capable of forward DC currents (I_F(DC)) up to 12A and square wave non-repetitive surge currents I_FSM up to 640A. Seven of the new devices are housed in TO-220-2L packages while the remaining five are provided in compact and flat DFN8×8 SMD packages.

Volume shipments of the new devices start today.